Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Hybrid memory paging method and device

A hybrid memory and page scheduling technology, applied in the computer field, can solve the problems of reduced efficiency and accuracy of memory scheduling methods, page faults, etc., and achieve the effects of improving lifespan, reducing the number of writes, and optimizing the progress of wear and tear.

Inactive Publication Date: 2015-01-28
TSINGHUA UNIV
View PDF2 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The problem in the existing PCM and DRAM hybrid memory paging method is that when scheduling memory pages, the factor considered is the temporal locality of the memory pages. For example, the CLOCK algorithm uses the use bit and dirty bit of the memory page as the scheduling memory page based on
As a result, the efficiency and accuracy of the memory scheduling method are reduced, resulting in a large number of page faults

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hybrid memory paging method and device
  • Hybrid memory paging method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0042] figure 1 A flow chart of the hybrid memory paging method provided in Embodiment 1 of the present invention is shown. The hybrid memory paging method described in Embodiment 1 of the present invention includes:

[0043] Step 101: Converting the uniform address of the memory into a memory address of a phase change memory PCM or a dynamic ran...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a hybrid memory paging method and device. The method includes the steps: 1, a unified memory address is converted into a PCD (page cache disable) or DRAM (dynamic random access memory) memory address; 2, if a currently accessed memory page is in the DRAM, a corresponding flag bit is set according to an access type currently accessed and the fact if the currently accessed memory page and a last visited page is an adjacent page; 3, if the currently accessed memory page is in the PCD, a corresponding flag bit is set according to an access type currently accessed and the fact if the currently accessed memory page and the last visited page is an adjacent page, and whether the currently accessed memory page needs to be moved to the DRAM is determined. With the hybrid memory paging method and device, memory pages needing frequent read operation is placed in the PCM as much as possible, and memory pages needing frequent write operation is placed in the DRAM as much as possible, and thus, writing operation of the PCM is reduced, and service life of the PCM is prolonged.

Description

technical field [0001] The invention relates to the technical field of computers, in particular to a hybrid memory paging method and device. Background technique [0002] With the continuous development of computer technology, the system has higher and higher requirements for memory. Due to the limitations of its own manufacturing process, the commonly used main memory DRAM is difficult to increase the storage capacity per unit area, resulting in a bottleneck in the scalability of the main memory. In addition, the energy consumption of DRAM has increasingly become a problem that cannot be ignored in computer systems. In order to make up for the shortage of DRAM, a new type of storage technology - phase change memory PCM is gradually developed. PCM has the advantages of low energy consumption, high density, non-volatile, etc., and has good scalability. [0003] However, PCM also has the disadvantage of limited unit write times. Therefore, using a hybrid memory of PCM and D...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F12/08G06F12/1009
Inventor 胡事民刘巍
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products