External cavity coherent vertical cavity surface emitting semiconductor laser

A vertical cavity surface emission and laser technology, applied in the field of lasers, can solve the problems of poor reliability and complex coherent laser structure, and achieve the effect of good reliability and high stability

Active Publication Date: 2015-01-28
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0003] The purpose of the present invention is to solve the technical problems of complex structure and poor reliability of coherent lasers in the prior art, and provide an external cavity coherent vertical cavity surface emitting semiconductor laser

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Embodiment Construction

[0016] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0017] Such as figure 1 and figure 2 As shown, the external cavity coherent vertical cavity surface emitting semiconductor laser of the present invention includes a high-contrast grating, a P-side electrode 3 , a P-type DBR4 , an active region 6 , an N-type DBR7 , a substrate 8 and an N-side electrode 9 .

[0018] Wherein, the P-type DBR4, the active region 6, the N-type DBR7, the substrate 8 and the N-surface electrode 9 are closely arranged in sequence from top to bottom, and a buffer layer may also be provided between the N-type DBR7 and the substrate 8. The N-type DBR7 has a multi-layer structure, and the P-type DBR4 is composed of a layer of high-refractive-index material and a layer of low-refractive-index material closely arranged from top to bottom. The low-refractive index material layer is provided with multiple oxidation holes 51 ...

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Abstract

The invention relates to an external cavity coherent vertical cavity surface emitting semiconductor laser, belongs to the technical field of lasers and solves the technical problem that a coherent laser is complex in structure and poor in reliability in the prior art. The laser comprises a P-type DBR (Distributed Bragg Reflector), an active region, an N-type DBR, a substrate and an N-face electrode which are sequentially and densely arranged from top to bottom. The edge of the upper surface of the P-type DBR is provided with a P-face electrode. The P-type DBR is provided with an oxidation confinement layer with a plurality of oxidation holes. The laser further comprises a high-contrast grating composed of a grating body and an external cavity. The high-contrast grating blocks all light emitting holes and light emitting hole joints. The lower surface of the external cavity is fixed to the upper surface of the P-type DBR, the optical thickness of the external cavity is in integral multiple of half of the wavelength, and the external cavity is made from a dielectric material of low refractive index. The grating body is arranged on the upper surface of the external cavity, the polarization direction is parallel or perpendicular to the (110) crystallographic orientation, the grating body is made from a dielectric material of high refractive index. The external cavity coherent vertical cavity surface emitting semiconductor laser can achieve polarization control and is high in stability and good in reliability.

Description

technical field [0001] The invention relates to an external cavity coherent vertical cavity surface emitting semiconductor laser, belonging to the technical field of lasers (VCSEL). Background technique [0002] Due to its good laser stability, coherence and beam quality, vertical cavity surface emitting semiconductor lasers are widely used in communication, printing, pump source, gas detection and analysis, computer optical mouse and other fields. With the further development of these fields, VCSELs are required to be able to achieve high light intensity output. In the prior art, laser array structures or coherent lasers are mainly used to solve this technical problem. The laser array structure is composed of multiple vertical cavity surface emitting semiconductor lasers arranged in sequence. Each vertical cavity surface emitting semiconductor laser mainly includes N-face electrodes, substrates, N-type DBR (Bragg reflectors), and A source region, a P-type DBR and a P-surf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/06H01S5/10
Inventor 宁永强李秀山秦莉贾鹏张建伟刘云王立军张星
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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