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Europium-erbium double-doped zinc selenide luminescent material, and preparation method and application thereof

A luminescent material, double doping technology, applied in luminescent materials, chemical instruments and methods, semiconductor devices, etc.

Inactive Publication Date: 2015-02-11
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But, the europium-erbium double-doped zinc selenide luminescent material that can be applied to thin film electroluminescence display has not yet been reported.

Method used

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  • Europium-erbium double-doped zinc selenide luminescent material, and preparation method and application thereof
  • Europium-erbium double-doped zinc selenide luminescent material, and preparation method and application thereof
  • Europium-erbium double-doped zinc selenide luminescent material, and preparation method and application thereof

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preparation example Construction

[0032] The preparation method of the above-mentioned europium-erbium double-doped zinc selenide luminescent material comprises the following steps:

[0033] Step S11, according to ZnSe:xEu 3+ ,yEr 3+ The stoichiometric ratio of each element is weighed ZnSe, Eu 2 Se 3 and Er 2 Se 3 Powder, wherein, x is 0.01-0.05, and y is 0.01-0.06.

[0034] In this step, preferably, x is 0.02 and y is 0.03.

[0035] Step S12, sintering the mixed powder at 900°C-1300°C for 0.5-5 hours to obtain the europium-erbium double-doped zinc selenide luminescent material, whose chemical formula is ZnSe:xEu 3+ ,yEr 3+ , x is 0.01-0.05, and y is 0.01-0.06.

[0036] In this step, it is preferable to sinter at 1250° C. for 3 hours.

[0037] One embodiment of the europium-erbium double-doped zinc selenide luminescent film, the general chemical formula of the material of the europium-erbium double-doped zinc selenide luminescent film is ZnSe:xEu 3+ ,yEr 3+ The europium-erbium double-doped zinc sele...

Embodiment 1

[0063] Choose powder with a purity of 99.99%, ZnSe, Eu 2 Se 3 and Er 2 Se 3 After the powder is evenly mixed according to the molar ratio of 0.95:0.01:0.015, it is sintered at 1250°C to form a ceramic target with a diameter of 50mm and a thickness of 2mm, and the target is loaded into a vacuum chamber. Then, the glass substrate with ITO was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, treated with oxygen plasma, and placed in a vacuum chamber. The distance between the target and the substrate is set to 60mm. Use a mechanical pump and a molecular pump to pump the vacuum of the cavity to 5.0×10 -4 Pa, the working gas flow rate of oxygen is 20sccm, the pressure is adjusted to 3.0Pa, the substrate temperature is 500°C, and the laser energy is 150W. The chemical formula of the obtained sample is ZnSe: 0.02Eu 3+ , 0.03Er 3+ luminescent thin film, and then vapor-deposit a layer of Ag on the luminescent thin film as the cathode.

[00...

Embodiment 2

[0069] Choose powder with a purity of 99.99%, ZnSe, Eu 2 Se 3 and Er 2 Se 3 After the powder is evenly mixed according to the molar ratio of 0.98:0.005:0.005, it is sintered at 900°C to form a ceramic target with a diameter of 50mm and a thickness of 2mm, and the target is loaded into a vacuum chamber. Then, the glass substrate with ITO was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, treated with oxygen plasma, and placed in a vacuum chamber. The distance between the target and the substrate was set to 45 mm. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 1.0×10 -3 Pa, the working gas flow rate of oxygen is 10sccm, the pressure is adjusted to 0.5Pa, the substrate temperature is 250°C, and the laser energy is 80W. The chemical formula of the obtained sample is ZnSe: 0.01Eu 3+ , 0.01Er 3+ luminescent thin film, and then vapor-deposit a layer of Ag on the luminescent thin film as the cathode. ...

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Abstract

The invention provides an europium-erbium double-doped zinc selenide luminescent material with a chemical formula of ZnSe:xEu<3+>,yEr<3+>, wherein x is 0.01-0.05, y is 0.01-0.06, ZnSe is a matrix, and Eu<3+> and Er<3+> ions are active elements. In an electroluminescence spectrum (EL) of a luminescent thin film prepared with the europium-erbium double-doped zinc selenide luminescent material, strong luminescence peaks can be found at 490nm and 580nm wavelength zones. The material can be used in a thin-film electroluminescent display device. The invention also provides a preparation method and an application of the europium-erbium double-doped zinc selenide luminescent material.

Description

【Technical field】 [0001] The invention relates to a europium-erbium double-doped zinc selenide luminescent material, a preparation method thereof, a europium-erbium double-doped zinc selenide luminescent film, a preparation method thereof, a thin-film electroluminescent device and a preparation method thereof. 【Background technique】 [0002] Thin film electroluminescent display (TFELD) has attracted widespread attention and developed rapidly due to its advantages such as active light emission, full solid state, impact resistance, fast response, large viewing angle, wide application temperature, and simple process. At present, the research on color and even full-color TFELD and the development of multi-band luminescent materials are the development direction of this subject. However, there is no report on the europium-erbium double-doped zinc selenide luminescent material that can be applied to thin-film electroluminescent displays. 【Content of invention】 [0003] Based on...

Claims

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Application Information

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IPC IPC(8): C09K11/88H01L33/50
Inventor 周明杰陈吉星王平冯小明
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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