12 results about "Zinc selenite" patented technology

The invention discloses an erbium-doped zinc selenide composite material as well as a preparation method and application thereof. The preparation method comprises the following steps: dissolving zinc nitrate hexahydrate and erbium nitrate hexahydrate in deionized water, wherein the molar ratio of erbium ions in the zinc nitrate hexahydrate is 0.02-0.08; adding sodium selenite and sodium hydroxide; adding a reducing agent hydrazine hydrate; after hydrothermal reaction for h, washing and drying to obtain the erbium-doped zinc selenide composite material. The material is of a cubic phase ZnSe structure, erbium is uniformly doped in crystal lattices, and the material is in a nearly spherical particle shape. Rich 4f electronic defect states are introduced into a ZnSe band gap through erbium doping, charge transfer (chemical enhancement) is remarkably promoted, the free carrier concentration is improved to excite localized surface plasma resonance (electromagnetic enhancement), and the synergistic effect of two enhancement mechanisms is achieved. The detection limit of the SERS substrate to methylene blue is as low as 3.24 * 10 <-8 > mol / L, the enhancement factor is as high as 1.73 * 10 < 4 >, and a new way is provided for environmental pollutant monitoring.

The invention relates to a plane cutting method and device for a zinc selenide zinc sulfide plate. The method comprises the steps that a to-be-cut material, the cutting thickness and cutting machining data are obtained, the to-be-cut material is placed on a material table of cutting equipment, and the center of the to-be-cut material coincides with the center of the material table; drawing a cutting line on the to-be-cut material according to the cutting thickness, and adjusting the position of a cutting tool in the cutting equipment according to the cutting line and the size of the to-be-cut material to obtain the position of the cutting tool; adjusting the position of a cutting liquid spraying element in the cutting equipment according to the position of the cutting tool; according to the cutting processing data, the adjusted cutting equipment is controlled to carry out first-time rotary cutting on the to-be-cut material until an anti-touch supporting column is reserved in the center of the to-be-cut material, and a semi-cut product is obtained; and the cutting crack of the semi-cut product is stuffed with an isolation element, the cutting equipment is controlled to cut the semi-cut product for the second time till the anti-touch supporting column is cut completely, and the cut product is obtained.

The application discloses a kind of double-defect composite photocatalyst and synthesis method and application thereof, it is related to photocatalytic technology field.The composite photocatalyst prepared by the application is non-metallic double-defect composite photocatalyst, including sulfur vacancy bismuth sulfide and the selenium vacancy zinc selenide attached to the surface of sulfur vacancy bismuth sulfide, and the selenium vacancy zinc selenide and sulfur vacancy bismuth sulfide form heterostructure;The composite photocatalyst under visible light irradiation, high-efficiency degradation of tartaric acid varenicline in water, degradation efficiency is high, degradation rate is fast, and can effectively reduce the pollution of tartaric acid varenicline to water environment, still can maintain higher catalytic activity after multiple cycle degradation.The composite photocatalyst provided by the application has simple preparation process, and the application effect is remarkable, provides a new technical path and data support for the efficient treatment of tartaric acid varenicline and other drug pollutants in water.

The invention belongs to the technical field of crystal annealing, and discloses a heat treatment method for improving the optical performance of a zinc selenide (ZnSe) single crystal, which specifically comprises the following steps of: 1, polishing the ZnSe crystal grown by a moving heater method; 2, cleaning the heat-treated quartz tube and the quartz bracket; and 3, vertically placing the polished ZnSe crystal on a quartz support, then putting the quartz support into a heat treatment quartz tube, and carrying out vacuum-pumping sealing treatment. And 4, putting the sealed quartz tube into a three-section horizontal tube furnace, setting proper heat treatment process parameters, and carrying out heat treatment on the ZnSe crystal. The heat treatment method provided by the invention is simple and efficient, a PbCl2 flux inclusion in the ZnSe crystal grown by a moving heater method can be removed, and the infrared transmittance of the crystal is improved from 38% to 70%.

A method of forming an alkaline-earth metal selenide and / or sulfide compound is disclosed as including reacting a carbonate of an alkaline-earth metal with zinc selenide (ZnSe) and / or zinc sulfide (ZnS) in a mixture atmosphere of hydrogen gas (H2) (10 vol. %) and nitrogen gas (N2) at a temperature between about 1,100° C. and about 1,400° C. for not more than about 1 hour.

The invention discloses a recycling method of zinc selenite waste, which belongs to the technical field of resource recycling, and comprises the following steps: (1) uniformly mixing selenium dioxide, the zinc selenite waste and water, and filtering to obtain a mixed solution; and (2) heating and stirring the mixed solution, adding the zinc selenite fine material into the mixed solution, adding zinc oxide to adjust the pH value to 2.5-4, reacting, filtering, washing with water until the pH value is 5-7, and drying to obtain the zinc selenite. Selenium dioxide, zinc selenite waste and water are uniformly mixed, then the mixed solution is heated, zinc selenite fine materials are added, zinc oxide is added to adjust the pH to be 2.5-4, reaction and washing are performed, the pH is 5-7, zinc selenite which is good in product stability and does not generate red selenium in the storage process is obtained, the selenium content of the zinc selenite is 40.7%-41.2%, the zinc content is 33.7%-34.2%, and the content of the zinc selenite is 33.7%-34.2%. A repose angle lt; and the average particle size is 75-150 [mu] m.

The invention discloses a device for preparing large-size polycrystalline zinc selenide and a growth method, and belongs to the technical field of infrared materials.The device comprises a chemical vapor deposition furnace assembly, a graphite tower assembly and a dust collection assembly.The large-size polycrystalline zinc selenide is prepared by optimizing deposition process parameters and combining a multi-crucible continuous feeding mechanism; high-quality zinc selenide crystals with the diameter and the thickness reaching the standard are successfully prepared, the strict requirements of downstream high-end devices for the size and the thickness of materials are met, efficient collection and cleaning of by-product zinc selenide dust are achieved by adopting a three-parallel-connection dust collector structure and a pulse electromagnetic valve purging technology, the pressure rise rate of a system is remarkably reduced, and the service life of the system is prolonged. And blockage and pressure fluctuation caused by dust accumulation are avoided, and a continuous and stable low-pressure environment is provided for crystal growth.

The present invention belongs to the field of glass preparation technology, and specifically relates to ultra-clear, ultra-thick float glass and its preparation method. The ultra-clear, ultra-thick float glass is composed of the following raw materials: quartz sand, calcium dodecyl heptaaluminate, titanium oxide whiskers, lanthanum hexaboride, barite, lithium hydroxide, Ca3(SbO4)2, Mg2SnO4, zinc selenite, and neodymium oxide. The ultra-clear, ultra-thick float glass of the present invention uses quartz sand, calcium dodecyl heptaaluminate, titanium oxide whiskers, lanthanum hexaboride, barite, and lithium hydroxide as the main raw materials to construct a dense glass network structure, ensuring the mechanical properties of the ultra-clear, ultra-thick float glass. A mixture of Ca3(SbO4)2, Mg2SnO4, zinc selenite, and neodymium oxide is used as a clarifying and decolorizing agent to ensure the light transmittance of the ultra-clear, ultra-thick float glass. The synergistic effect of the raw materials ensures that the prepared glass has excellent flexural strength and light transmittance.

The invention belongs to the technical field of glass preparation, and particularly relates to ultra-white and ultra-thick float glass and a preparation method thereof. The ultra-white and ultra-thick float glass is prepared from the following raw materials: quartz sand, dodecacalcium heptaaluminate, titanium oxide whiskers, lanthanum hexaboride, barite, lithium hydroxide, Ca3 (SbO4) 2, Mg2SnO4, zinc selenite and neodymium oxide. According to the ultra-white and ultra-thick float glass, quartz sand, dodecacalcium heptaaluminate, titanium oxide whiskers, lanthanum hexaboride, barite and lithium hydroxide are used as main raw materials to construct a compact glass network structure, the mechanical performance of the ultra-white and ultra-thick float glass is ensured, a mixture of Ca3 (SbO4) 2, Mg2SnO4, zinc selenite and neodymium oxide is used as a clarification decolorizing agent, and the ultra-white and ultra-thick float glass is obtained. And the light transmittance of the prepared ultra-white and ultra-thick float glass is ensured. Therefore, the synergistic effect of the raw materials ensures that the prepared glass has very good bending strength and light transmittance.

The application discloses an erbium-doped zinc selenide composite material and a preparation method and application thereof. The preparation method comprises the following steps: dissolving zinc nitrate hexahydrate and erbium nitrate hexahydrate with a molar ratio of 0.02-0.08 in deionized water; adding sodium selenite and sodium hydroxide; then adding a reducing agent, hydrazine hydrate; after hydrothermal reaction for h, washing and drying to obtain the erbium-doped zinc selenide composite material. The material is a cubic phase ZnSe structure, and the erbium is uniformly doped in the crystal lattice in a near-spherical particle shape. The application introduces rich 4f electron defect states in the ZnSe band gap by erbium doping, significantly promotes charge transfer (chemical enhancement), and improves the free carrier concentration to excite the localized surface plasmon resonance (electromagnetic enhancement), so that the synergistic effect of the two enhancement mechanisms is realized. The detection limit of the SERS substrate for methylene blue is as low as 3.24*10 ‑8 mol / L, and the enhancement factor is as high as 1.73*10 4 , which provides a new way for environmental pollutant monitoring.

The present invention discloses a method for improving the hardness of zinc selenide grown by chemical vapor deposition reaction, comprising: injecting solid metal zinc into a crucible, boiling it to make zinc vapor, and then feeding it into a reaction chamber; introducing a mixed gas of hydrogen selenide and hydrogen sulfide into the reaction chamber until the grain growth is completed. The present invention improves the hardness reduction derived from the grain growth or grain growth shape produced by the long-term process of CVD-ZnSe growth without damaging the optical properties, so that the ZnS particles are micro-dispersed and grown in the ZnSe crystal, and the excessive growth of the grains is suppressed; at the same time, the ZnS particles grown in this dispersed manner suppress the growth of dendrites, induce epitaxial growth, and improve the characteristics of the crystal organization, thereby increasing the physical properties such as volume hardness.

The invention relates to a preparation method of a wurtzite zinc selenide quantum rod material with a controllable size, and belongs to the technical field of semiconductor nanomaterial preparation. The preparation method specifically comprises the following steps: firstly, dissolving zinc carboxylate and selenium powder in oleylamine and dodecanethiol to form a uniform mixed solution A; at the reaction temperature, part of zinc carboxylate reacts with selenium to generate sphalerite zinc selenide clusters; the sphalerite zinc selenide cluster is acted by a surface ligand, and wurtzite zinc selenide is induced to grow in a reaction environment; the long-chain organic ligand promotes the zinc selenide quantum wires to grow along certain crystallographic orientation to form the zinc selenide quantum wires; and the phase structure of wurtzite zinc selenide is further stabilized through rapid cooling. The preparation process is low in raw material cost, good in process controllability, free of inert or vacuum atmosphere protection, controllable in product structure and crystallographic orientation, capable of achieving diameter and length regulation and control in size at the same time, capable of achieving diameter regulation and control within the range smaller than the exciton glass bulb radius, and more remarkable in quantum confinement effect.