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Preparation method of zinc selenide membrane

A zinc selenide and thin film technology, applied in electrolytic inorganic material coating and other directions, can solve the problems of difficult control of product uniformity, high production cost, difficult to enlarge, etc. Effect

Active Publication Date: 2018-01-09
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods have disadvantages such as difficult control of product uniformity, small output, high production cost, and difficulty in scaling up.

Method used

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  • Preparation method of zinc selenide membrane
  • Preparation method of zinc selenide membrane
  • Preparation method of zinc selenide membrane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A kind of preparation method of zinc selenide thin film of the present invention specifically comprises the following steps:

[0025] (1) Clean the fluorine-doped tin dioxide conductive glass (FTO, used as the cathode sheet) three times with detergent, soak it in isopropanol ultrasonically for 15 minutes, then soak it in ethanol ultrasonically for 15 minutes, rinse it three times with deionized water, and then Drying with nitrogen gas to obtain fluorine-doped tin dioxide conductive glass with a clean surface;

[0026] (2) Configure a mixed solution containing 2mol / L sodium hydroxide, 10mmol / L selenous acid, 10mmol / L zinc acetate, and 0.5mol / L disodium edetate, and then use nitrogen gas bubbling to remove the mixed solution. Oxygen 15min;

[0027] (3) With step (2) gained mixed solution as electrochemical deposition liquid, with step (1) gained clean fluorine-doped tin dioxide conductive glass as counter electrode, with saturated calomel electrode as reference electrode...

Embodiment 2

[0031] A kind of preparation method of zinc selenide thin film of the present invention specifically comprises the following steps:

[0032] (1) Clean the fluorine-doped tin dioxide conductive glass (FTO, used as the cathode sheet) three times with detergent, soak it in isopropanol ultrasonically for 15 minutes, then soak it in ethanol ultrasonically for 15 minutes, rinse it three times with deionized water, and then Drying with nitrogen gas to obtain fluorine-doped tin dioxide conductive glass with a clean surface;

[0033] (2) Configure a mixed solution containing 2mol / L sodium hydroxide, 10mmol / L selenous acid, 10mmol / L zinc acetate, and 0.5mol / L disodium edetate, and then use nitrogen gas bubbling to remove the mixed solution. Oxygen 15min;

[0034] (3) With step (2) gained mixed solution as electrochemical deposition liquid, with step (1) gained clean fluorine-doped tin dioxide conductive glass as counter electrode, with saturated calomel electrode as reference electrode...

Embodiment 3

[0038] A kind of preparation method of zinc selenide thin film of the present invention specifically comprises the following steps:

[0039] (1) Clean the fluorine-doped tin dioxide conductive glass (FTO, used as the cathode sheet) three times with detergent, soak it in isopropanol ultrasonically for 15 minutes, then soak it in ethanol ultrasonically for 15 minutes, rinse it three times with deionized water, and then Drying with nitrogen gas to obtain fluorine-doped tin dioxide conductive glass with a clean surface;

[0040] (2) Configure a mixed solution containing 2mol / L sodium hydroxide, 10mmol / L selenous acid, 10mmol / L zinc acetate, and 0.5mol / L disodium edetate, and then use nitrogen gas bubbling to remove the mixed solution. Oxygen 15min;

[0041] (3) With step (2) gained mixed solution as electrochemical deposition liquid, with step (1) gained clean fluorine-doped tin dioxide conductive glass as counter electrode, with saturated calomel electrode as reference electrode...

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Abstract

The invention discloses a preparation method of a zinc selenide membrane. The preparation method comprises the following steps of S1, clearly cleaning and drying the surface of a cathode sheet; S2, preparing a selenium and zinc containing solution, and performing deoxidization on the obtained selenium and zinc containing solution; S3, by taking the selenium and zinc containing solution obtained inthe step S2 as an electrochemical deposition liquid, the cathode sheet obtained in the step S1 as a counter electrode, a saturated calomel electrode as a reference electrode and a platinum sheet as aworking electrode, performing electrochemical deposition on the cathode sheet to form the zinc selenide membrane, wherein a deposition voltage is 0.2-(-0.4)V, a deposition temperature is 25-80 DEG C,and a deposition time is 1-20min; and S4, after electrochemical deposition is finished, taking out the zinc selenide membrane, and cleaning and drying the zinc selenide membrane to obtain the zinc selenide membrane. The method is rapid in reaction rapid, liable in industrial large scale production and low in production cost; and a product obtained through the method is good in homogeneity.

Description

technical field [0001] The invention relates to the technical field of zinc selenide thin film preparation, in particular to a preparation method of zinc selenide thin film. Background technique [0002] Zinc selenide is a typical compound semiconductor and an important II-VI semiconductor material. It is a wide bandgap (2.67eV) direct transition semiconductor with good transmission performance and sufficient light transmission aperture. The main transmission wavelength range is 0.5 μm to 22 μm. It has good permeability to the infrared band and is an excellent infrared optical material. At the same time, it has high chemical stability and strong deliquescence resistance. At present, it has been widely used in advanced optoelectronic fields such as infrared thermal imaging, laser transmission windows, and blue light-emitting devices, and plays an irreplaceable role in aerospace, military, and information fields. [0003] At present, the material preparation technologies of z...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D9/08
Inventor 郭学益徐润泽李栋田庆华
Owner CENT SOUTH UNIV
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