Method for preparing intermediate infrared laser transition metal ion doped-zinc selenide ceramic

A transition metal ion and infrared laser technology, which is applied in the field of preparation of transition metal ion doped zinc selenide ceramic materials for ultra-high pressure mid-infrared lasers, can solve the problem of reducing the optical properties of ceramic materials, increasing synthesis costs, synthetic material pollution, and affecting laser output and other problems, to achieve the effects of reducing adverse reactions and high temperature volatilization, shortening sintering time, and uniform microstructure

Inactive Publication Date: 2018-10-12
SINOMA SYNTHETIC CRYSTALS CO LTD +1
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

At this stage, due to the limitations of sintering mold materials and equipment used in hot pressing sintering and hot isostatic pressing sintering technology, the maximum sintering pressure can only be at MPa level, generally within 300MPa. If it is necessary to further increase the density of ceramics and eliminate pores in the material, It is necessary to prolong the sintering time, increase the sintering temperature, or add sintering aids, which will greatly increase the synthesis cost and the pollution of synthetic materials, reduce the optical properties of ceramic materials, and affect the laser output

Method used

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  • Method for preparing intermediate infrared laser transition metal ion doped-zinc selenide ceramic
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  • Method for preparing intermediate infrared laser transition metal ion doped-zinc selenide ceramic

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Embodiment 1

[0047] This embodiment provides a method for preparing a mid-infrared laser transition metal ion-doped zinc selenide ceramic, comprising the following steps:

[0048] 1) In an inert environment, after mixing the ZnSe powder and the ferrous selenide powder in a molar ratio of 120:1, ball milling with a batch ball mill for 6 hours at a speed of 160 rpm;

[0049] 2) Put the uniformly mixed ZnSe powder and ferrous selenide mixture into the quartz crucible after impurity removal treatment, and vacuumize to 1×10 -5 Pa, and then continuously feed nitrogen to keep the pressure at 4×10 4 At the same time, adjust the temperature to 1000 °C, keep it warm for 10 minutes, and then cool it to room temperature;

[0050] 3) Put the mixed powder after impurity removal treatment into a prefabricated mold, place it under a pressure of 100MPa, and perform cold isostatic pressing;

[0051] 4) Put the sample formed in step 3) into the prefabricated synthesis module, quickly put it into the hexahe...

Embodiment 2

[0053] This embodiment provides a method for preparing a mid-infrared laser transition metal ion-doped zinc selenide ceramic, comprising the following steps:

[0054] 1) Under an inert environment, after mixing the ZnSe powder and the ferrous selenide powder in a molar ratio of 120:1, ball milling with a batch ball mill for 5 hours at a speed of 180 rpm;

[0055] 2) Put the uniformly mixed ZnSe powder and ferrous selenide mixture into the quartz crucible after impurity removal treatment, and vacuumize to 1×10 -5 Pa, and then continuously feed argon to keep the pressure at 4×10 4 Pa, adjust the temperature to 1020°C at the same time, keep warm for 15 minutes, and cool to room temperature;

[0056] 3) Put the mixed powder after impurity removal treatment into a prefabricated mold, place it under a pressure of 120MPa, and perform cold isostatic pressing;

[0057] 4) Put the sample formed in step 3) into the prefabricated synthesis module, quickly put it into the hexahedron top ...

Embodiment 3

[0059] This embodiment provides a method for preparing a mid-infrared laser transition metal ion-doped zinc selenide ceramic, comprising the following steps:

[0060] 1) In an inert environment, after mixing the ZnSe powder and the ferrous selenide powder in a molar ratio of 120:1, mill them with a batch ball mill for 4 hours at a speed of 200 rpm;

[0061] 2) Put the uniformly mixed ZnSe powder and transition metal compound powder ferrous selenide into the quartz crucible after the impurity removal treatment, and vacuumize to 1×10 -5 Pa, and then continuously feed nitrogen to keep the pressure at 5×10 4 , at the same time adjust the temperature to 1050 ° C, keep warm for 20 minutes, and cool to room temperature;

[0062] 3) Put the mixed powder after impurity removal treatment into a prefabricated mold, place it under a pressure of 150MPa, and perform cold isostatic pressing;

[0063] 4) Put the sample formed in step 3) into the prefabricated synthesis module, quickly put i...

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Abstract

The invention relates to a method for preparing intermediate infrared laser transition metal ion doped-zinc selenide ceramic. The method includes the following steps that 1, ZnSe powder and transitionmetal composition powder which are mixed evenly are subjected to impurity removal treatment, and then subjected to isostatic cool pressing forming under the pressure of 50-200 MPa; 2, a formed samplein the step1 is placed into a hexahedron ejector machine, and subjected to heat preservation and pressure maintaining for 30-180 min under the pressure of 1-6 Gpa and at the temperature of 900-1,300DEG C, and finally the ceramic is obtained. With the method for preparing the ceramic, the compactness of the ceramic is effectively improved, pores in the ceramic are eliminated, and therefore the comprehensive performance of the ceramic is greatly improved; sintering temperature is decreased, sintering time is shortened, and therefore adverse reactions, high-temperature volatilization and otherproblems are easily reduced.

Description

technical field [0001] The invention relates to a method for synthesizing a mid-infrared laser transition metal ion-doped zinc selenide ceramic material, in particular to a preparation method for an ultra-high-voltage mid-infrared laser transition metal ion-doped zinc selenide ceramic material. Background technique [0002] The wavelength band of mid-infrared laser is at 2-5 μm, which is exactly in the two transmission windows of 2.0-2.5 μm and 3.5-5.0 μm, and there are many characteristic absorption spectra of important molecules in the 2-5 μm band atmosphere, so mid-infrared laser The (2-5μm) band has two important features: "1. Atmospheric window area, 2. Molecular fingerprint area"; because of these two features, mid-infrared lasers play an important role in military and civilian fields, such as Infrared remote sensing, infrared imaging, photoelectric countermeasures, infrared lithography, laser surgery, and atmospheric monitoring, etc. [0003] There are two ways to ge...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/547C04B35/645C04B35/622C04B35/626
CPCC04B35/547C04B35/622C04B35/62615C04B35/62645C04B35/62675C04B35/6455C04B2235/446C04B2235/60
Inventor 周振翔岳麓王方标刘鹏
Owner SINOMA SYNTHETIC CRYSTALS CO LTD
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