Chromium-doped zinc selenide monocrystal Bridgman growth device and method

A growth device, a technology of zinc selenide, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of gradient in the doping density of Cr:ZnSe crystal, and achieve the effect of ensuring the crystal

Active Publication Date: 2015-04-22
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0004] The purpose of the present invention is to solve the technical problem that there is a gradient in the doping density in the Cr:ZnSe crystal prepared by the method of the prior art, and to provide a Bridgman growth device and method for a chromium-doped zinc selenide single crystal

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  • Chromium-doped zinc selenide monocrystal Bridgman growth device and method
  • Chromium-doped zinc selenide monocrystal Bridgman growth device and method

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Embodiment Construction

[0036] The following combination Attached picture The present invention is further described.

[0037] Such as figure 1 -2, the Bridgman growth device of the chromium-doped zinc selenide single crystal of the present invention comprises a base 1, a furnace cover 2, a graphite felt 3, a drive rod 4, a locking pin 5, a crucible 6, a crucible cover 7, Two brackets 8 , an upper heater 9 , a lower heater 10 , two heating electrodes 11 and two thermocouples 12 . Wherein, the base 1 includes a support base 101 and a fixed platform 102; the fixed platform 102 is fixed on the top of the support base 101, and the fixed platform 102 is provided with a through hole 1021 for vacuumizing the furnace chamber; the support base 101 and the fixed platform 102 can be One piece. The furnace cover 2 includes an outer shell 201, an inner shell 202 and a flange 203; both the outer shell 201 and the inner shell 202 are hollow structures with bottom openings, generally cylindrical, and the outer...

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Abstract

The invention discloses a chromium-doped zinc selenide monocrystal Bridgman growth device and method, belonging to the technical field of crystal material preparation. The invention solves the technical problem of gradient doping density in the Cr:ZnSe crystal. The chromium-doped zinc selenide monocrystal Bridgman growth device comprises a base, a furnace mantle, a graphite felt, a transmission rod, a lockpin, a crucible, a crucible cover, two brackets, an upper heater, a lower heater, two heating electrodes and two thermocouples, wherein the transmission rod, lockpin, crucible, crucible cover, upper heater and lower heater are respectively made from graphite. The device can implement mixing and smelting of chromium powder and zinc selenide powder together, and can be used for preparing the large-volume uniform-crystalline-phase Cr:ZnSe crystal.

Description

technical field [0001] The invention discloses a Bridgman growth device and method for chromium-doped zinc selenide single crystal, belonging to the technical field of crystal material preparation. Background technique [0002] Chromium-doped zinc selenide (Cr 2+ :ZnSe) is an infrared laser crystal material that can be directly pumped to generate mid-infrared (1.7-3.6μm) laser output. As a laser gain medium material, it has the advantages of low maximum phonon energy, long fluorescence lifetime, and wide tuning band. , It has broad application prospects in the fields of directional infrared laser interference, infrared ranging, infrared medical treatment, infrared spectroscopy, industrial detection, and environmental monitoring. [0003] The Bridgman crystal growth method is a method commonly used in the preparation of alkali metal and alkaline earth metal halide and fluoride single crystal growth method, also known as the crucible drop method. The crystal powder is packed...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B11/00
CPCC30B11/00C30B29/46
Inventor 赵东旭王飞王云鹏王登魁赵斌赵欣石琳琳刘洪珍梅晶晶
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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