Method For Obtaining Polycrystal Optical Zinc Selenide

A zinc selenide and polycrystalline technology, which is applied in chemical instruments and methods, crystal growth, polycrystalline material growth, etc., can solve the problem of low optical performance parameters of polycrystalline zinc selenide, complex reactor structure, process stability, and limitations And other issues

Active Publication Date: 2012-04-04
TIANJIN JINHANG INST OF TECH PHYSICS
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Deposited on the wall of a square reactor with an inlet flange with a hole for supplying the vapor flow of hydrogen selenide mixed with argon and zinc mixed with argon, surrounding each The holes are distributed with holes for supplying protective gas according to concentric circles. Using the method and equipment of this application can improve the effective yield and corresponding productivity of zinc selenide extracted from hydrogen selenide, but the disadvantage of this method is that the reactor Structural complexity and process stability for continuous deposition on the reactor wall
[0009] The polycrystalline zinc selenide cultivated by this method has low optical performance parameters in the visible light region and near and mid-infrared regions, which is the disadvantage of this method.
This limits its possibility of being applied in opto-electronic instruments, and the process of manufacturing products of this application is difficult to implement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0020] The raw material is zinc selenide powder, for example: its grade is ETO.035.011.TY (commercially available in the Russian Federation) (impurity components: Cu, Mg-5 %, Al-5 %, Mn-5 %, Ni-5 %, Ti-5 %, Ag-5 %, Bi-5 %; Fe-4 %, Sn-4 %, Cr-4 %, Pb-4 % mass), the bottom of 38 kilograms of quantity packing into graphite container, the porous graphite separator of band double-layer graphitization braid ΓΓH-2M is arranged, condensation chamber and graphite substrate-cover, and the container that installs is put into vacuum furnace, carries out Vacuum to residual pressure 1·10 -3 mmHg and the vessel was heated to a temperature of 1130°C, the evaporation of the raw material and the subsequent condensation of the vapor onto the substrate took place within 75 h, when the temperature of the substrate was 1040°C.

[0021] Controlled cooling at the end of cultivation (i.e. condensation process): cooling at a rate of 70 °C / h up to 900 °C, then 40 °C / h up to 600 °C, after which the entire...

example 2

[0026] The raw material is dense zinc selenide fragments, the quantity is 32 kg, pre-annealed in an inert gas (such as argon, etc.) medium, the temperature is 1200 ° C for 10 hours, and then the raw material is loaded into the container to cultivate the blank, and all subsequent The process is the same as Example 1. In other application processes, it is known that it is also possible to extend the annealing time to 15h. The diameter of the zinc selenide blank is 350mm and the thickness is 40mm. It is obtained at a vapor deposition rate of 0.35mm / h. Its transmittance is 68% in the 2.5-14μm spectral range, and the birefringence in optical materials does not exceed 100mm / cm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention, belonging to the optical medium technology field, provides a method for obtaining polycrystal optical material, particularly a method for obtaining polycrystal optical zinc selenide. The method comprises heating and evaporating of the raw material. The steam is condensed upon the heated substrate. The raw material carries out evaporation at a temperature ranging from 1050 DEG C to 1150 DEG C, with the steam being condensed upon the substrate while the substrate being heated to a temperature within the range of 950 to 1050 DEG C. To improve the quality of the obtained product, the speed of the steam depositing upon the substrate shall be controlled. The cultivated blank shall be cooled down via the specific technology, thereby decreasing the internal stress of the blank. The method improves the technology for obtaining large-sized optical material blanks, raises the optical quality of the material used within the visible light and infrared spectrum range, and improves the yield of the qualified products.

Description

technical field [0001] The invention belongs to the field of optical material technology, namely a method for obtaining polycrystalline optical materials which are transparent to visible and infrared radiation in a broad spectral range. Background technique [0002] Chalcogenide zinc and cadmium (ZnSe, ZnS, CdTe, ZnTe) and their solid solutions have comprehensive physical properties that allow their application in different fields of optics and electronics (see H.Γ. Ъ.B. Grinev, Л.M. Galicinskiy, B.Д. Ryzhkov "With Compound A II B VI Based scintillators, acquisition, performance and use", Kharkov, Monocrystal Institute, 2007, p. 296). Polycrystalline ZnSe is the most widely used optical material for the design of optical-electrical instrument lenses and protective chambers with a wide spectral range. Zinc selenide can be obtained by different methods: it can be obtained by vacuum hot pressing, and it can also be obtained by vapor deposition (see E.M. Gavrishuk "polycrysta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/02C30B29/48
Inventor 季一勤张荣实洪伟郭嘉辉加里宾.E.A古谢夫.P.E杰米坚科.A.A杜纳耶夫.A.A米罗诺夫.I.A
Owner TIANJIN JINHANG INST OF TECH PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap