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Process for rapid heating preparation of zinc selenide nano-crystal film by tubular gas furnace

An atmosphere furnace, zinc selenide technology, applied in chemical instruments and methods, selenium/tellurium compounds, zinc compounds, etc., can solve the problems of expensive equipment, high requirements, difficult to obtain zinc selenide films, etc. The effect of stable degree and uniform size distribution

Inactive Publication Date: 2006-09-06
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, the process methods for preparing zinc selenide thin films mainly include: vacuum deposition technology (vacuum evaporation, electron beam evaporation, magnetron sputtering, molecular beam epitaxy, laser flash evaporation and metal organic chemical vapor deposition), chemical water bath, etc., vacuum deposition Technical preparation of zinc selenide thin film process equipment complex and high vacuum conditions, and the equipment is very expensive, and the method of chemical water bath is difficult to obtain relatively pure zinc selenide thin film

Method used

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  • Process for rapid heating preparation of zinc selenide nano-crystal film by tubular gas furnace
  • Process for rapid heating preparation of zinc selenide nano-crystal film by tubular gas furnace
  • Process for rapid heating preparation of zinc selenide nano-crystal film by tubular gas furnace

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Experimental program
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Effect test

Embodiment 1

[0012] Embodiment 1, at first get elemental selenium powder and elemental zinc powder and mix by the molar ratio of 1: 1, then, the mixture is transferred in the high-energy ball mill jar that tungsten carbide is made, ball mills under the protection of nitrogen or argon, makes ZnSe powder The scale is 5 to 20 nanometers; take 0.2 grams of ZnSe nano powder and put it into the groove at one end of the quartz boat; place the silicon wafer or quartz substrate on the other side of the quartz boat, 15 cm away from the groove where the ZnSe nano powder is placed. 20 cm; then push the quartz boat into the quartz tube, and the pushing position should be appropriate (to ensure that the temperature of the powder is below 160°C when the tube furnace body is heated up to 800°C, and the ZnSe powder can be moved to the furnace body by pushing the quartz tube center); then cover the quartz tube, and check whether the joints of the quartz tube gas path of the tube furnace are in tight contact ...

Embodiment 2

[0018] Embodiment 2, at first get elemental selenium powder and elemental zinc powder and mix by the molar ratio of 1: 1, then, transfer the mixture into the high-energy ball mill jar made of tungsten carbide, ball mill under the protection of nitrogen or argon, make ZnSe The scale of powder is 5~20 nanometers; In the ZnSe nanometer powder, mix the Cr powder of its quality 1%-1‰, other steps are with embodiment 1, can obtain the ZnSe doped with Cr on deposition silicon chip or quartz glass substrate like this film.

Embodiment 3

[0019] Embodiment 3, at first get elemental selenium powder and elemental zinc powder and mix by the molar ratio of 1: 1, then, the mixture is transferred in the high-energy ball mill pot that is made of tungsten carbide, ball mills under the protection of nitrogen or argon, makes ZnSe The scale of powder is 5~20 nanometers; Get ZnSe (or Cr: ZnSe=1: 100-1000) nanopowder 0.2 gram, put into the groove of one end of quartz boat; On the other side, it is 15 cm to 20 cm away from the concave; then push the quartz boat into the quartz tube, and the pushing position is the same as in Example 1; then cover the quartz tube, and check the ports of the gas path of the tube furnace quartz tube Whether the contact is tight to prevent air leakage.

[0020] Start the heating program (30°C per minute until the temperature reaches 800°C, keep warm for one hour); during the heating process, turn on the air extractor to the maximum, observe the reading of the negative pressure gauge, when the re...

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Abstract

This method consists of mixing elemental selenium powder and elemental zinc powder as the ratio of 1:1 and rolling them into energetic grinding tank, grinding until the dimension of zinc selenide powder reach 5-20 nanometer under the protect of nitrogen or argon gas; putting zinc selenide powder into a flute at the end of quartz boat, while putting silicon chip or quartz chip into the other flute of quartz boat; laying the quartz boat into a quartz pipe of more than 1.5 times as large as tube furnace in length, triply turning on air exhauster to eject oxygen and inflating argon; putting the cold end of quartz pipe into the tube furnace, heating zinc selenide nanometer powder stock in the quartz pipe to 800-1000 DEG C in 5 minutes. We can get zinc selenide nanocrystal film from silicon chip or quartz chip when its temperature reaches 160-240 DEG C. This invention has no strict request for the degree of vacuum, and can control the thickness of film and the dimension of nanocrystal film by technical condition.

Description

technical field [0001] The invention relates to a preparation method of a photoelectric functional material, in particular to a method for preparing a zinc selenide nanocrystalline thin film by using a tube-type atmosphere furnace to rapidly raise the temperature. Background technique [0002] At present, the process methods for preparing zinc selenide thin films mainly include: vacuum deposition technology (vacuum evaporation, electron beam evaporation, magnetron sputtering, molecular beam epitaxy, laser flash evaporation and metal organic chemical vapor deposition), chemical water bath, etc., vacuum deposition Technical preparation of zinc selenide thin film process equipment complex and high vacuum conditions, and the equipment is very expensive, and the method of chemical water bath is difficult to obtain relatively pure zinc selenide thin film. Contents of the invention [0003] The purpose of the present invention is to overcome the above-mentioned shortcoming of the...

Claims

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Application Information

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IPC IPC(8): C01G9/00C01B19/00
Inventor 汪敏强霍萧姚熹
Owner XI AN JIAOTONG UNIV
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