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Mask read-only memory

A read-only memory, mask-type technology, used in read-only memory, static memory, information storage, etc., to solve problems such as unprogrammable data

Active Publication Date: 2015-02-11
EMEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the mask-type ROM leaves the factory, all the stored data has been recorded in it, and the user can only read the stored data in the mask-type ROM, but cannot program the data
That is to say, the user must first provide the stored data to the manufacturer of the mask type ROM. When the memory is manufactured and delivered to the user, all the stored data has been recorded in it and no further programming can be performed. action

Method used

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Embodiment Construction

[0022] After the mask-type ROM is produced and leaves the factory, all stored data has been recorded therein. Therefore, the inside of the mask type ROM must include two different memory cell structures, wherein one memory cell structure records the first state (such as logic "1"), and the other memory cell structure records the second state (such as logic "0"). The memory cell structures of the two states are introduced respectively below.

[0023] Please refer to Figure 2A to Figure 2C , which is a perspective view, a top view and an equivalent circuit schematic diagram of the storage unit structure of the first state of the mask-type ROM in the first embodiment. The memory cell 500 in the first state has a substrate of a P-type well region 510 . A first gate structure, a second gate structure, and a third gate structure are formed above the P-type well region 510 . Wherein, the first gate structure includes the gate oxide layer 521 and the first polysilicon gate 513-1 ...

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Abstract

A novel mask read-only memory is provided. After the mask read-only memory leaves the factory, the mask read-only memory has two types of cell structures. The first type cell structure records a first storing state (e.g. the logic state “1”), and the second type cell structure records a second storing state (the logic state “0”).

Description

technical field [0001] The present invention relates to a non-volatile memory (Non-volatile memory), and more particularly to a mask type read-only memory (Mask ROM). Background technique [0002] It is well known that non-volatile memory can retain its data content after power failure. Generally speaking, after the non-volatile memory is manufactured and leaves the factory, the user can program the non-volatile memory, and then record data in the non-volatile memory. According to the times of programming, the non-volatile memory can be further divided into a multi-time programming memory (MTP memory for short), or a one-time programming memory (OTP memory for short). Basically, users can modify the data stored in the MTP memory multiple times. On the contrary, the user can only program the OTP memory once. Once the OTP memory is programmed, its stored data cannot be modified. [0003] Another non-volatile memory is called Mask ROM (Mask ROM). When the mask ROM is shipp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/112G11C16/02
CPCG11C17/12H10B20/34H10B20/387
Inventor 吴孟益黄志豪黄冠铭
Owner EMEMORY TECH INC
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