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Bandgap Voltage Generation Circuit

A voltage generation circuit and circuit technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve problems such as accuracy effects, and achieve the effect of improving accuracy and small chip area

Active Publication Date: 2017-01-04
WUXI ZGMICRO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that the voltage difference Vos of the positive and negative terminal input voltage of the operational amplifier affects the accuracy of the output voltage VBG

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] figure 2 The circuit diagram of the bandgap voltage generation circuit provided for Embodiment 1 of the present invention, such as figure 2 As shown, the bandgap voltage generating circuit includes: a first switch control signal, a second switch control signal, a bias circuit 201, a first transistor 202, a voltage sampling circuit 203, and a second transistor 204;

[0039] The bias circuit 201 is connected to the power supply, and is used to provide a first bias current for the first transistor and a second bias current for the second transistor 204, so that the first transistor 202 and the second transistor 204 work in a linear range ;exist figure 2 In , the power supply is omitted, and VIN represents the output voltage of the power supply;

[0040] The emitter of the first transistor 202 is connected to the bias circuit 201 at a first node, so that the bias circuit 201 provides a first bias current for the first transistor 202;

[0041] The emitter of the second...

Embodiment 2

[0057] image 3 The circuit diagram of the bandgap voltage generating circuit provided for Embodiment 2 of the present invention, as image 3 shown, in this example, and figure 2 In comparison, the third resistor R3 and the fourth resistor R4 are added.

[0058] The third resistor R3 and the fourth resistor R4 are connected in series, one end of the third resistor R3 is connected to the second node, and one end of the fourth resistor R4 is in phase with the base and collector of the second bipolar transistor Q2 and the third sampling capacitor C3 connect.

[0059] When the resistance values ​​of the first resistor R1 and the second resistor R2 are small, the first resistor R1 and the second resistor R2 will shunt the current of the current source I1, causing the current of the first bipolar transistor Q1 to be affected by the change of the resistance value, so The third resistor R3 and the fourth resistor R4 provide current compensation for the first bipolar transistor Q1 ...

Embodiment 3

[0062] Figure 4 The circuit diagram of the bandgap voltage generating circuit provided for Embodiment 3 of the present invention, as Figure 4 shown in Figure 4 In, the connection relationship between the bias circuit 201 and the first transistor 202 and the second transistor 204 and figure 2 same.

[0063] The first transistor 202 is specifically a first bipolar transistor Q1, and the second transistor 204 is specifically a second bipolar transistor Q2.

[0064] The first current source I1 provides the first bias current for the first bipolar transistor Q1, so that the first bipolar transistor Q1 works in a linear range. At this time, the first node voltage V1 is generated, and the second current source I2 is the second The bipolar transistor Q2 provides a second bias current to make the second bipolar transistor Q2 work in a linear range, and at this time, a second node voltage V2 is generated.

[0065] The voltage sampling circuit 203 includes a first switch K1, a se...

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PUM

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Abstract

The present invention relates to a bandgap voltage generating circuit, comprising: a bias circuit for providing a first bias current of the first transistor, a second bias current of the second transistor; and the emitter of the first transistor bias circuit is connected to the first node, the bias circuit for providing a first bias current of the first transistor; a second transistor and a bias circuit connected to the second node, a second bias circuit for providing a second transistor a bias current; voltage sampling circuit, a first voltage sampled by the voltage sampling capacitor C1 of the first node, with a second sampling capacitor C2 samples the first and second nodes of the difference voltage based on a first and a second sampling capacitor C1 sampling the voltage on the capacitor C2 to obtain two output voltages. The bandgap voltage generating circuit of the present invention provides, by adjusting the divider ratio, the output voltage is changed to improve the accuracy of the output voltage, and having a smaller chip area, and may generate a reference voltage lower temperature compensated.

Description

technical field [0001] The invention relates to the field of electronic circuits, in particular to a bandgap voltage generation circuit. Background technique [0002] In the prior art, the implementation of the bandgap voltage source is as follows figure 1 shown in figure 1 Among them, including resistors R1, R2, R3, PNP bipolar transistors Q1 and Q2, and operational amplifier OP. Its output voltage VBG is a relatively accurate voltage, the base-emitter voltage Vbe1 of Q1 and the base-emitter voltage Vbe2 of Q2 are negative temperature coefficients, and the base-emitter voltage Vbe2 of Q2 and the base-emitter voltage of Q1- The difference between the emitter voltage Vbe1 has a positive temperature coefficient. The operational amplifier OP is adjusted so that the node VP voltage is equal to the node VN voltage, so the voltage drop on the resistor R3 is equal to Vbe2-Vbe1, and the current of the resistor R1 is equal to the current of the resistor R3, so the voltage drop on ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/567
Inventor 王钊
Owner WUXI ZGMICRO ELECTRONICS CO LTD