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Method for improving yield of patterning sapphire substrate

A patterned sapphire, yield rate technology, applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as low cost, uneven surface, etc., and achieve the requirements of characteristics and the effect of low cost

Inactive Publication Date: 2015-02-25
SUNPHIRE OPT TRONIC
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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for improving the yield rate of patterned sapphire substrates, so as to overcome the problem of surface unevenness, so that the photolithography process can be carried out smoothly, and the cost is low

Method used

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  • Method for improving yield of patterning sapphire substrate
  • Method for improving yield of patterning sapphire substrate
  • Method for improving yield of patterning sapphire substrate

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Embodiment Construction

[0018] Such as figure 2 and image 3 As shown, the present invention discloses a method for improving the yield rate of a patterned sapphire substrate, the steps of which are as follows.

[0019] The first step is to apply multi-layer barrier layer coating on sapphire; because the surface of the existing sapphire substrate has curvature, especially local unevenness, after the multi-layer barrier layer coating is completed, the top surface of the cover layer is flat, which can be carried out smoothly The conventional yellow light lithography process.

[0020] The multi-layer barrier layer is coated with a three-layer structure. The bottom layer is a thicker layer, which can fill up the undulating structure and create conditions for the effectiveness of the photoresist lithography process on the top layer. The bottom layer material is generally non-photoresist containing C, H , O polymers, such as organic bottom anti-reflective coating Organic BARC, and act as a shield for tr...

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Abstract

The invention discloses a method for improving the yield of a patterning sapphire substrate. The method includes the steps that sapphire is coated with a plurality of barrier layers; the photolithography process is executed on the barrier layers; the barrier layers are etched; sapphire etching is conducted on the sapphire; cleaning is carried out. By the adoption of the method, the problem that the surface is uneven can be solved, the photolithography technology can be implemented smoothly, and cost is low.

Description

technical field [0001] The invention relates to a method for improving the yield rate of a patterned sapphire substrate, which is suitable for processing and manufacturing sapphire substrates in the fields of semiconductors, LEDs, and 3C. Background technique [0002] In the blue-white LED process mainly for lighting applications, more than 90% of the substrates are made of sapphire based on cost-effective considerations; sapphire polished flat wafers can be directly used as blue-white LED substrates, or as figure 1 As shown, after the yellow light lithography process and etching process, and then cleaned, the sapphire flat sheet is made into a patterned sapphire substrate (PSS, Patterned Sapphire Substrate); the LED factory replaces the sapphire flat sheet substrate with a patterned sapphire substrate, which can Effectively improve the luminous efficiency of LED particle products by more than 20%, effectively improving product performance and competitiveness; therefore, in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/00
CPCH01L33/22H01L33/005
Inventor 王晓靁刘伯彦徐常基钟其龙
Owner SUNPHIRE OPT TRONIC
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