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Fast high-side power FET gate sensing circuit for high-voltage applications

A high-voltage, gate-based technology, applied in the direction of high-efficiency power electronic conversion, voltage-only measurement, current-only measurement, etc., can solve problems such as endangering accuracy, breakdown, and premature turn-on of low-side FETs

Active Publication Date: 2019-01-18
TEXAS INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, accuracy will be compromised because the delay from level shifting varies with different operating conditions and process variations
Therefore, under certain conditions, the low-side FET can turn on prematurely and cause shoot-through

Method used

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  • Fast high-side power FET gate sensing circuit for high-voltage applications
  • Fast high-side power FET gate sensing circuit for high-voltage applications
  • Fast high-side power FET gate sensing circuit for high-voltage applications

Examples

Experimental program
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Embodiment Construction

[0034] 1. buck regulator

[0035] figure 1 A conventional buck regulator circuit 10A is illustrated. The voltage source 12 is coupled between ground and the first switch 14 to convert the input voltage V IN selectively supplied to circuit 10. The second switch 16 is coupled between the first switch 14 (at node 15) and ground. Inductor 18 is coupled between node 15 and node 19, inductor 18 presents an output voltage V at node 19 OUT . A capacitor 20 is coupled between node 19 and ground, and a load is shown as a resistive element 22 and is also coupled between node 19 and ground.

[0036] When the first switch 14 is closed, current flows through the inductor 18 and into the load 22, thus charging the inductor by increasing its magnetic field, thereby increasing V OUT . When V OUT When a specified value is reached, the first switch 14 is opened and the second switch 16 is closed by a control circuit (not shown). As the magnetic field weakens, current continues to flow...

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PUM

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Abstract

This application relates to a fast high-side power FET gate sensing circuit for high voltage applications. The present invention relates to a circuit for sensing the gate voltage of a power FET. The switching circuit includes a switching FET with a high voltage rating, the drain of which is coupled to the gate of the power FET, and the source of which is coupled to the output node. A first feedback loop is coupled to the gate of the switching FET to facilitate sensing the rising gate voltage. A second feedback loop is coupled to the gate of the switching FET to facilitate sensing a falling gate voltage.

Description

technical field [0001] The present invention relates generally to sensing circuits, and more particularly to a circuit for sensing the gate voltage of a power FET. Background technique [0002] Buck regulators are step-down DC / DC converters and are useful in many circuit applications, particularly high power circuits. Power field effect transistors ("FETs" or "MOSFETs") are designed to handle higher power levels than other semiconductor devices, and are therefore commonly used as switches in buck regulators. [0003] For example, a synchronous buck regulator has a high-side power FET for charging the inductor and a low-side power FET for recycling the stored inductor current. Typically, a high-side power FET is sensed to control a buck regulator. To avoid shoot-through, the low-side FET cannot be turned on until the high-side FET is turned off. Therefore, a circuit is needed to sense when the high side FET is turned off. Accurate and fast sensing is critical for optimal ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/156
CPCH02M3/1563H02M3/1566G01R19/0092H02M1/38H02M3/1588Y02B70/10G01R19/0084
Inventor 政·李詹伟钟
Owner TEXAS INSTR INC