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light-emitting element

A technology for light-emitting elements and regions, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of reduced electron and hole recombination efficiency, reduced luminous efficiency of light-emitting elements, etc., and achieve the effects of enhanced crystallinity and reduced stress.

Active Publication Date: 2018-02-16
SUZHOU LEKIN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the recombination efficiency of electrons and holes decreases, and because of this, the luminous efficiency of the light-emitting element decreases

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] Hereinafter, embodiments will be described with reference to the drawings.

[0049] It will be understood that when an element is referred to as being "on" or "under" another element, it can be directly on or under the other element, and one or more intervening elements may also be present. When an element is referred to as being 'on' or 'under', 'under the element' and 'on the element' can also be included based on the element.

[0050] In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience of description and clarity. In addition, the size or area of ​​each constituent element does not fully reflect its actual size.

[0051] figure 2 and image 3 are cross-sectional views of light emitting elements according to Examples, respectively. figure 2 The figure shows a horizontal light-emitting element. image 3 The figure shows a vertical light-emitting element.

[0052] The light emitting element ac...

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PUM

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Abstract

According to one embodiment, a light emitting element includes: a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and Wherein the well layer and the barrier layer are laminated alternately at least once. The active layer includes: a first region, which is arranged between the adjacent barrier layer and the well layer, and linearly reduces the energy band gap; and a second region, which is arranged between the adjacent well layer and the barrier layer , and the band gap increases linearly. In the well layer, at least one first region and second region adjacent to the same well layer have thicknesses different from each other.

Description

technical field [0001] The embodiment relates to a light emitting element. Background technique [0002] Light-emitting elements such as light-emitting diodes (LEDs) and laser diodes using III-V or II-VI compound semiconductor materials can exhibit red, green, blue, and ultraviolet of various colors. White light can also be generated with high efficiency using fluorescent materials or by color mixing. For example, compared to conventional light sources such as fluorescent lamps and incandescent lamps, light emitting elements have advantages such as low power consumption, semi-permanent life, quick response time, safety, and environmental protection. [0003] Therefore, these light-emitting elements are increasingly used in transmission modules of optical communication units, light-emitting diode backlights as replacements for cold-cathode fluorescent lamps (CCFLs) constituting backlights of liquid crystal display (LCD) devices, and white light-emitting diodes used as Repl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/04H01L33/06
CPCH01L33/06H01L33/12H01L33/04H01L33/32
Inventor 韩永勋李善浩宋基荣崔洛俊
Owner SUZHOU LEKIN SEMICON CO LTD