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High-voltage cascade current mirror circuit

A current mirror and circuit technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve problems such as unfavorable low power consumption design, and achieve the effect of reducing the working power supply voltage, small chip area, and low power consumption

Active Publication Date: 2015-03-04
WUXI ZGMICRO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If a smaller resistor is used, the current value of I1 needs to be increased, which is not conducive to low power consumption design

Method used

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  • High-voltage cascade current mirror circuit
  • High-voltage cascade current mirror circuit
  • High-voltage cascade current mirror circuit

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Embodiment Construction

[0024] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0025] Reference herein to "one embodiment" or "an embodiment" refers to a particular feature, structure or characteristic that can be included in at least one implementation of the present invention. "In one embodiment" appearing in different places in this specification does not all refer to the same embodiment, nor is it a separate or selective embodiment that is mutually exclusive with other embodiments. Unless otherwise specified, the words connected, connected, and joined in this document mean that they are electrically connected directly or indirectly.

[0026] image 3 It is a circuit diagram of the high-voltage cascaded current mirror circuit 300 in the first embodiment of the present invention. image 3 As shown, the h...

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Abstract

The invention provides a current mirror circuit. The high-voltage cascade current mirror circuit comprises a current source, three low-voltage transistors and two high-voltage transistors. The first connecting end of the current source is connected with a first power end, and the second connecting end of the current source is connected with the first connecting ends of the third low-voltage transistor. The control end of the third low-voltage transistor is connected with the first connecting end of the third low-voltage transistor, and the second connecting end of the third low-voltage transistor is connected with a drain electrode of the first high-voltage transistor and a grid electrode of the first low-voltage transistor. A source electrode of the first high-voltage transistor is connected with a drain electrode of the first low-voltage transistor, and a grid electrode of the first high-voltage transistor is connected with a grid electrode of the second high-voltage transistor and the second connecting end of the current source. A source electrode of the first low-voltage transistor is connected with the second power end, and a grid electrode of the first low-voltage transistor is connected with a grid electrode of the second low-voltage transistor. A source electrode of the second low-voltage transistor is connected with the second power end, and a drain electrode of the second low-voltage transistor is connected with a source electrode of the second high-voltage transistor. Therefore, the lowest working power supply voltage can be reduced, meanwhile high voltage can be also borne, and the high-voltage cascade current mirror circuit further has low power consumption and a small chip area.

Description

【Technical field】 [0001] The invention relates to the field of current mirror circuits, in particular to a high-voltage cascaded current mirror circuit. 【Background technique】 [0002] In some high-voltage circuits, it is necessary to withstand higher voltage, so it is necessary to cascade high-voltage tubes on low-voltage tubes to withstand high voltage. However, due to the poor matching of the high-voltage tube, the replication of the current mirror needs a low-voltage tube to ensure the replication accuracy. [0003] figure 1 A prior art high-voltage cascaded current mirror circuit is described, which includes high-voltage NMOS (N-channel Metal Oxide Semiconductor) transistors MNHV3 and MNHV4 and low-voltage NMOS transistors MN1 and MN2. Generally, high-voltage NMOS transistors are manufactured using high-voltage MOS technology, which can withstand higher voltages, such as 30V, and low-voltage NMOS transistors are manufactured using low-voltage MOS processes, which can ...

Claims

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Application Information

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IPC IPC(8): G05F3/26
Inventor 王钊
Owner WUXI ZGMICRO ELECTRONICS CO LTD
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