High Voltage Cascaded Current Mirror Circuit

Abstract

The present invention provides a current mirror circuit which includes a current source, three low voltage transistors and two high-voltage transistors. A first connecting terminal connected to the first power supply terminal of said power supply source, which is connected to a first connecting terminal connected to a second end of the third low voltage transistors. Low voltage control terminal of the third transistor is connected to a first end connected thereto, and a second connection terminal connected to the gate and the drain of the first low voltage transistor of the first high voltage transistor. A source electrode connected to a first high voltage transistor and the drain of the first low voltage transistor, a gate connected to the second connecting end and a second gate high voltage and a current source transistor. A second source electrode connected to the first supply terminal of the low voltage transistor, a gate connected to a gate of the second low voltage transistor. The second low voltage transistor source electrode connected to a second power supply terminal, a drain connected to the source stage and a second high voltage transistor. This reduces the minimum operating power supply voltage, while able to withstand high pressure, but also has lower power consumption and a smaller chip area.

Description

【Technical field】 [0001] The invention relates to the field of current mirror circuits, in particular to a high-voltage cascaded current mirror circuit. 【Background technique】 [0002] In some high-voltage circuits, it is necessary to withstand higher voltage, so it is necessary to cascade high-voltage tubes on low-voltage tubes to withstand high voltage. However, due to the poor matching of the high-voltage tube, the replication of the current mirror needs a low-voltage tube to ensure the replication accuracy. [0003] figure 1 A prior art high-voltage cascaded current mirror circuit is described, which includes high-voltage NMOS (N-channel Metal Oxide Semiconductor) transistors MNHV3 and MNHV4 and low-voltage NMOS transistors MN1 and MN2. Generally, high-voltage NMOS transistors are manufactured using high-voltage MOS technology, which can withstand higher voltages, such as 30V, and low-voltage NMOS transistors are manufactured using low-voltage MOS processes, which can ...

AI Technical Summary

Problems solved by technology

If a smaller resistor is used, the current value of I1 needs to be increased, which is not conducive to low power consumption design

Images