Unlock instant, AI-driven research and patent intelligence for your innovation.

Solar Cell Texturing

一种图案化、掩模的技术,应用在太阳能电池领域,能够解决脆弱不能、不能满足最小行宽规格、提供足够的竖直间隙等问题,达到长工作寿命的效果

Inactive Publication Date: 2018-06-12
PALO ALTO RES CENT INC
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional mask printing techniques such as inkjet, screen printing, or flexographic printing cannot meet the minimum line width specifications, and newer techniques such as microcontact printing, dip pen nanolithography (DNP, using AFM-type probes as writing tip) or other MEMS methods are too slow, fragile or do not provide sufficient vertical clearance over large areas

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar Cell Texturing
  • Solar Cell Texturing
  • Solar Cell Texturing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The present invention relates to improvements in methods of printing mask patterns for producing light-trapping structures on polysilicon wafers during the production of low-cost solar cells. The following description is provided to enable one of ordinary skill in the art to make and use the invention presented in the context of a particular application and its requirements. When used herein, directional terms such as "upper," "lower," "downward," "front," "rear" are intended to provide relative positions for purposes of description, and are not intended to designate an absolute frame of reference. Additionally, the phrases "integrally connected" and "integrally molded" are used herein to describe a connection relationship between two parts of a single molded or machined structure, and are not to be confused with the terms "connected" or "coupled" ( Not distinguished by the modifier "integrally"), the term indicates two separate structures joined, for example, by adhesi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Patterned light-trapping structures (e.g., pyramids or trenches) are produced by printing liquid masking material from an array of closely spaced parallel elongated channels such that portions of the mc-Si wafer are exposed through openings defined between printed mask features. trough features) of polycrystalline silicon (mc-Si) solar cells. Closely spaced mask-patterned features are obtained using arrays of conduits (e.g., microsprings or straight polyimide cantilevers), where each conduit includes slit-type, tube-type, or ridge / valley-type liquid-guiding channels that guide A channel extends between the fixed base end and the tip of the conduit such that mask material supplied from the reservoir is precisely expelled from the tip onto the mc-Si wafer. The exposed planar surface portions are then etched to form the desired patterned light trapping structures (eg, trench structures).

Description

technical field [0001] The present invention relates to solar cells, and in particular to methods for producing light-trapping structures on polycrystalline solar cell wafers. Background technique [0002] Texturing of solar cells is an important process step to improve light-trapping performance and increase overall efficiency. Currently, single crystal wafers are textured using a KOH etchant that forms pyramidal structures. These structures formed along the crystal planes lead to very good light-trapping properties. [0003] On the other hand, polysilicon (mc-Si) wafers must be etched isotropically. For multicrystalline wafers, an industry standard isotexture process is used which involves etching the entire wafer surface with a suitable etchant, typically a HF / nitric acid / acetic acid mixture. The isotexturing process uses the irregularities of the kerf damage to roughen the surface. Although the isotexturing process is cost-effective, the resulting isotextured surface...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0236H01L31/18
CPCH01L31/02363H01L31/1804Y02E10/52Y02E10/547Y02P70/50H01L31/18H01L21/308
Inventor S·J·H·利姆D·德布勒克S·加纳
Owner PALO ALTO RES CENT INC