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Low Power Protection Circuit

A protection circuit, low power technology, applied in the field of low power protection circuit, can solve the problem of pump output voltage VCCP out of control and so on

Active Publication Date: 2017-09-22
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the first operating voltage VDD1 is maintained at the first stable voltage level and the second operating voltage VDD2 is reduced to a very low state, the pump output voltage VCCP generated by the voltage pump circuit may be out of control

Method used

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Embodiment Construction

[0044] Reference will be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Please note that the same reference numerals are used wherever possible in the drawings and descriptions to represent the same or similar parts.

[0045] Please refer to Figure 2A , Figure 2A It is a block flow diagram of a low power protection circuit according to an embodiment of the present invention. The low power protection circuit 200 includes a voltage detector 210 , an output logic operation circuit 220 , a pulse generation circuit 230 , an SR latch 240 , and a voltage detector 250 . The voltage detector 210 receives the voltage enable signal PWUP and generates a high pressure pump enable signal HVPEN by detecting the voltage level of the voltage enable signal PWUP. That is, the voltage detector 210 can detect the voltage level of the voltage enable signal PWUP, and when the voltage level of the voltage enable s...

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Abstract

The present invention provides a low power protection circuit, comprising a first voltage detector, a pulse generating circuit, an SR latch, a second voltage detector, and an output logic operation circuit. Low power protection circuits are suitable for dynamic random access memory (DRAM) with dual operating voltages. The first voltage detector generates the high voltage pump enable signal by detecting the voltage level of the voltage enable signal. The pulse generating circuit generates a voltage start pulse according to the voltage start signal. The SR latch receives the voltage start pulse, the high voltage pump enable signal and the reverse voltage start signal, and generates an output signal. The second voltage detector generates the low voltage pump enable signal by detecting the voltage level of the output signal. The output logic operation circuit generates a pump enable signal according to the low voltage and high pressure pump enable signals.

Description

technical field [0001] The present invention mainly relates to a protection circuit, and particularly relates to a low power protection circuit. Background technique [0002] With the rapid development of today's technology, semiconductor memory is commonly used in electronic products. A traditional dynamic random access memory (Dynamic Random Access Memory, DRAM for short) uses dual operating voltages. In order for the DRAM to work properly, the second operating voltage with a lower voltage level is used, and the use of the first operating voltage with a higher voltage level can make the voltage pump circuit of the DRAM more efficient. Operate efficiently. [0003] Please refer to figure 1 , figure 1 It is a waveform diagram of traditional dynamic random access memory DRAM. During the time period T0, the operating voltages VDD1 and VDD2 rise, and the operating voltage VDD1 reaches the first stable voltage level relatively quickly. When the operating voltage VDD1 reach...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/08G11C11/401
CPCG11C5/145G11C11/4074
Inventor 威尔逊·艾伦约翰
Owner NAN YA TECH