Pixel array, manufacturing method thereof and display device

[0035] Example 1

[0036] Figure 3A A schematic diagram of a photolithography process in a method for fabricating a pixel array according to an embodiment of the present invention; Figure 3B This is a schematic diagram of the secondary lithography process in the manufacturing method of the pixel array according to the above-mentioned embodiment of the present invention. like Figure 3A , 3B As shown, Embodiment 1 of the present invention proposes a method for fabricating a pixel array, which specifically includes the following steps: providing a substrate 50, on which are sequentially formed: a first metal layer, a gate insulating layer and a semiconductor layer 53, a second The metal layer 55, wherein the second metal layer 55 is etched twice by two exposures to form the first area A of the data line and the second area B to form the first pixel electrode. Specifically, the manufacturing method uses physical vapor deposition (PVD) technology to continuously form films of Ti metal and Al metal to form the second metal layer 55 . Then, the first exposure and etching process is performed by using the first mask 10, and the pattern of the data lines corresponding to the first area A and the pattern of the metal pixel electrodes corresponding to the second area B are formed on the second metal layer 55. pattern. Then, a second exposure and etching process is performed using the second mask 10' to remove the Al metal layer on the metal pixel electrode. Wherein, the first and second masks 10, 10' are ternary masks.

[0037] Two metal alloy layers 55a and 55b are formed on the second metal layer 55 in the first region A, and a single-layer metal 55b is formed on the metal pixel electrode corresponding to the second region B through the two exposure and etching processes. Preferably, the two metal alloy layers 55a and 55b are made of Ti/Al alloy material, and the single-layer metal 55b is made of Ti structure.

[0038] Compared with the process flow of the traditional array substrate, the process flow of the pixel array provided by the first embodiment of the present invention adds one exposure process and one etching process in the processing of the second metal layer. Therefore, effective conduction between the metal pixel electrode and the ITO transparent pixel electrode can be ensured, the storage capacitance of the pixel can be increased, and the display stability of the display device can be greatly improved.

[0039] Example 2

[0040] Figure 4 This is a schematic diagram of a photolithography process in a method for fabricating a pixel array according to another embodiment of the present invention. like Figure 4 As shown, Embodiment 2 of the present invention proposes a method for fabricating a pixel array, which specifically includes the following steps: providing a substrate 50, on which are sequentially formed: a first metal layer, a gate insulating layer and a semiconductor layer 53, a second The metal layer 55, wherein the second metal layer 55 is etched twice by one exposure to form the first area A of the data line and the second area B to form the first pixel electrode.

[0041] Specifically, the manufacturing method uses physical vapor deposition (PVD) technology to continuously form films of Ti metal and Al metal to form the second metal layer. Then, using the gray-scale third mask 20 for one exposure and development process and two etching processes, the second metal layer on the data line in the first area A forms a Ti/Al structure, and the metal pixel electrode in the opening area forms a single structure. layer of Ti structure. The third mask is a ternary mask.

[0042] Figure 4 This is a schematic diagram of a photolithography process in a method for fabricating a pixel array according to another embodiment of the present invention. Compared with the process flow of the conventional array substrate, the process flow of Embodiment 2 adds an etching process during the processing of the second metal layer. Therefore, the effective conduction between the metal pixel electrode and the ITO transparent electrode can be ensured, the storage capacitance of the pixel can be increased, and the display stability of the display device can be greatly improved.

[0043] It should be understood by those skilled in the art that, in addition to being included in the electrowetting display device of the present invention, the pixel array disclosed in the present invention may also be included in other display devices that need to increase the aperture ratio and storage capacitance. In addition to Ti/Al and Al, the metal alloy layer and the single metal layer can also be replaced by other metals or metal alloys with the same properties.