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A silicon-based vertical groove nanowire light modulator

An optical modulator and vertical slot technology, applied in the field of integrated optics, can solve the problems of high transmission loss and complex manufacturing process, and achieve the effect of low transmission loss, small radio frequency transmission loss, and improved modulation bandwidth

Active Publication Date: 2017-06-23
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Purpose of the invention: In order to solve the deficiencies of the prior art, the present invention provides a silicon-based vertical groove nanowire optical modulator, which solves the problems of high transmission loss and complicated manufacturing process through vertical groove nanowires and photoelectric materials, and overcomes the deficiencies of existing technology

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  • A silicon-based vertical groove nanowire light modulator
  • A silicon-based vertical groove nanowire light modulator
  • A silicon-based vertical groove nanowire light modulator

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Embodiment Construction

[0020] The present invention will be further explained below in conjunction with the accompanying drawings.

[0021] like figure 1 As shown, a silicon-based vertical groove nanowire optical modulator includes a silicon substrate 1, and is characterized in that it includes a buried oxide layer 2, a signal electrode 3, an electrode ground 4, a vertical groove nanowire 5, and a photoelectric material 6 and filler 7;

[0022] The buried oxide layer 2 covers the silicon substrate 1, one signal electrode 3 is located in the center of the surface of the buried oxide layer 2, and two electrode grounds 4 are symmetrically located on both sides of the signal electrode 3 and parallel to the signal electrode 3; each Between one electrode ground 4 and the signal electrode 3, a group of photoelectric materials 6 and vertical grooved nanowires 5 are respectively included; the group of photoelectric materials 6 is composed of two identical photoelectric materials 6, and the opposite surfaces...

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Abstract

The invention discloses a silicon substrate vertical trough type nanowire optical modulator which can be applied to the fields such as optical communication, integrated photonics and silicon substrate photonics. The crevice zone and an upper cladding of a vertical trough type nanowire are filled with polymer materials high in electro-optic coefficient and low in refractive index, intrinsic silicon is arranged in the high-refractive index zone, lithium niobate is arranged on two sides and makes direct contact with electrodes, and then the silicon optical modulator is obtained. By the adoption of the optical modulator, the optical power and radio frequency electric field of the crevice zone are made to be maximum, effective area is minimum, optical electrooptical effect is realized, the overlap integrating factor between the optical field and the radio frequency electric field is made to be maximum, radio frequency transmission loss is low, the effective refractive indexes of the optical mode and the radio frequency mode are matched, and then optimal modulation performance is realized.

Description

technical field [0001] The invention relates to the technical field of integrated optics, in particular to a silicon-based vertical groove nanowire light modulator. Background technique [0002] Optical modulators are key components in optical networks and optical interconnections, and their main function is to convert electrical signals into optical signals for transmission in optical fiber links or integrated optical waveguides. Because the external modulation method has the advantages of high speed and can eliminate the chirp phenomenon generated by the internal modulation, the external modulation technology is used in high-speed and large-capacity optical communication systems. For the selection of materials, optical modulators mainly use materials such as semiconductors, ferroelectrics, and polymers. Among them, semiconductor materials are easy to realize monolithic integration of various photonic devices, forming photonic integrated circuits (PICs), breaking through th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/03
CPCG02F1/0305G02F2202/20
Inventor 肖金标徐银
Owner SOUTHEAST UNIV
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