Photoetched wafer treatment method
A processing method and wafer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as reliability risk, yield reduction, wafer surface damage, etc., to improve yield and reliability, The effect of solving the problem of electrostatic discharge damage caused by photolithography
Inactive Publication Date: 2015-03-25
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
During the photolithography process, when chemical solvents such as developers or pure water during cleaning rub against the surface of the rotating wafer, electrostatic discharge will occur, causing charges to accumulate on the surface of the wafer (see figure 1 Figure a in ), the subsequent wet process causes local strong electrochemical reactions, causing damage on the wafer surface (see figure 1 Figure b in ), resulting in reduced yield or reliability risk
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[0016] In order to have a more specific understanding of the technical content, characteristics and effects of the present invention, now in conjunction with the accompanying drawings, the details are as follows:
[0017] The present invention uses low-power plasma to process the wafer after photolithography, and its principle is as follows image 3 As shown, during the process, the charge accumulated on the surface of the wafer caused by photolithography and the charged ions in the plasma are neutralized and eliminated, so that the subsequent wet process will not be damaged due to charge accumulation. An electrochemical reaction occurs, thereby avoiding the wafer damage problem caused by photolithography-induced electrostatic discharge.
[0018] In this embodiment, the feature size of the photolithography process is 0.001-5 microns, and the wafer substrate may be silicon, silicon oxide, silicon nitride or other silicon compound materials. After the photolithography process i...
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The invention discloses a photoetched wafer treatment method. The method includes the steps that after a photoetching process is finished, and before a wet etching process is conducted, the surface of a wafer is treated through low-power plasma which does not react with the wafer and photoresist, and accumulated electric charge, caused by discharging of static electricity generated by photoetching, on the surface of the wafer is eliminated. According to the method, the photoetched wafer is treated through the low-power plasma, and the accumulated electric charge, caused by discharging of static electricity generated by photoetching, on the surface of the wafer is eliminated, so that the situation that the electrochemical reaction occurs due to electric charge accumulating in the later wet etching process can be avoided, the problem of static electricity discharging damage caused by photoetching is solved, the yield is increased, and reliability is improved.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to wafer processing after photoetching. Background technique [0002] Photolithography is a common process in the manufacture of semiconductor integrated circuits. During the photolithography process, when chemical solvents such as developers or pure water during cleaning rub against the surface of the rotating wafer, electrostatic discharge will occur, causing charges to accumulate on the surface of the wafer (see figure 1 Figure a in ), the subsequent wet process causes local strong electrochemical reactions, causing damage on the wafer surface (see figure 1 Figure b in ), resulting in lower yields or reliability risks. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a wafer processing method after photolithography, which can avoid electrostatic discharge damage caused by photolithography...
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IPC IPC(8): H01L21/02
CPCH01L21/0201
Inventor 王星杰
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP