Controlling the Ratio of Ions and Neutral Species in Wafer Processing in Dual Plasma Source Reactors
A plasma and ion technology, which is applied in the field of controlling the ratio of ions to neutral substances in a wafer processed by an ion source reactor, and can solve problems such as being unsuitable for the second etching process and the like
Active Publication Date: 2018-09-14
LAM RES CORP
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[0004] Because different processes are optimized in different ways, what is suitable for the first etch process may not be suitable for the second etch process
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[0021]In this application, the terms "semiconductor wafer", "wafer", "substrate", "wafer substrate" and "partially fabricated integrated circuit" are used interchangeably. Those skilled in the art will appreciate that the term "partially fabricated integrated circuit" may refer to a silicon wafer during any of the many stages of fabrication of an integrated circuit on the silicon wafer. Wafers or substrates used in the semiconductor device industry typically have a diameter of 200 mm, or 300 mm, or 450 mm. Also, the terms "plate" and "grid" are used interchangeably. The following detailed description assumes that the invention is implemented on a wafer. However, the present invention is not limited thereto. Workpieces can be of various shapes, sizes, and materials. In addition to semiconductor wafers, other workpieces that may utilize the present invention include various items such as printed circuit boards and the like.
[0022] In the following description, numerous spe...
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The technology disclosed herein relates to the control of the ratio of ions to neutral species in a dual plasma source reactor processing a wafer, and in particular to a method and apparatus for etching a substrate. The plate assembly divides the reaction chamber into lower and upper subchambers. The plate assembly includes upper and lower plates having holes therethrough. When the holes in the upper plate are aligned with the holes in the lower plate, ions and neutral species can pass through the plate assembly into the lower subchamber. When these said pores are misaligned, ions are prevented from passing through the module while neutral species are much less affected. Therefore, the ratio of ion flux:neutral species flux can be tuned by controlling the size of the aperture alignment area. In certain embodiments, a plate of the plate assembly is embodied as a series of coaxial, independently movable injection control rings. Furthermore, in some embodiments, the upper subchamber is embodied as a series of coaxial plasma regions separated by walls of insulating material.
Description
technical field [0001] The present invention generally relates to the field of semiconductor manufacturing, and more particularly to the control of the ratio of ions to neutral species in a dual plasma source reactor for processing wafers. Background technique [0002] One operation that is frequently used in semiconductor manufacturing is the etching operation. In an etching operation, one or more materials are partially or completely removed from a partially fabricated integrated circuit. Plasma etching is often employed, especially where the geometries involved are small, employ high aspect ratios, or require delicate pattern transfer. Typically, plasmas contain electrons, ions and free radicals. Free radicals and ions interact with the substrate to etch features, surfaces and materials on the substrate. [0003] As device dimensions shrink, plasma etch processes need to become increasingly precise and uniform in order to produce high-quality products. One driver for ...
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IPC IPC(8): H01L21/67H01L21/02
CPCH01L21/0274H01L21/0276H01L21/67359H01L2221/67H01J37/32357H01J37/32422H01J2237/334H01L21/3065H01L21/67069
Inventor 拉金德尔·迪恩赛南尚基阿列克谢·马拉赫塔诺夫埃里克·A·赫德森
Owner LAM RES CORP