Saturated solution for preparing semiconductor electrothermal films

An electrothermal film and semiconductor technology, applied in the field of saturated solution, can solve the problems of application limitation, high starting current, and high production cost of PTC materials, and achieve the effects of low production cost, no inrush current, and long service life.

Inactive Publication Date: 2015-04-01
罗敏 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The semiconductor PTC electric heating material that has been used since the 1980s overcomes the shortcomings of many metal wire materials, but the production cost of PTC materials

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0013] A kind of saturated solution that is used to prepare semiconductor electrothermal film, the percentage by weight is: tin tetrachloride 40, titanium tetrachloride 2, nickel tetrachloride 2, potassium chloride 1, antimony trichloride 8, the balance is anhydrous Ethanol, mix and dissolve, and fully stir to form a saturated solution.

Embodiment 2

[0015] A kind of saturated solution for preparing semiconductor electric heating film, the weight percent is: tin tetrachloride 50, titanium tetrachloride 1, nickel tetrachloride 6, potassium chloride 2, antimony trichloride 6, the balance is anhydrous Ethanol, mix and dissolve, and fully stir to form a saturated solution.

Embodiment 3

[0017] A saturated solution for preparing a semiconductor electric heating film, the weight percentage is: tin tetrachloride 60, titanium tetrachloride 0.5, nickel tetrachloride 8, potassium chloride 3, antimony trichloride 8, and the balance is anhydrous Ethanol, mix and dissolve, and fully stir to form a saturated solution.

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PUM

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Abstract

The invention discloses a saturated solution for preparing semiconductor electrothermal films in the technical field of semiconductor electrothermal film materials. According to percentage by weight, the composition of the saturated solution is as follows: 40 to 60 percent of tin tetrachloride, 0.5 to 2 percent of titanium tetrachloride, 2 to 8 percent of nickel tetrachloride, 1 to 3 percent of potassium chloride, 5 to 8 percent of antimony trichloride and the balance of absolute ethanol. The saturated solution is sufficiently vaporized, and permeates surface pores, deposits and is sintered on a high-insulativity, sudden change-resistant and high temperature-resistant substrate, and thereby an electrothermal film is produced. The saturated solution has the following advantages: the efficiency of electric energy-to-thermal energy conversion is high (up to 99.5 percent), naked flames do not exist, power attenuation is little, an electrothermal source does not have surge current, and operation is stable. The highest working temperature can reach 750 DEG C, the service life is long, and the electrothermal film can continuously work for more than 5000 hours. The electrothermal film can be adapted to various power supply modes, the fabrication cost is low, and application fields are extremely broad.

Description

technical field [0001] The invention belongs to the technical field of semiconductor electrothermal film materials, and in particular relates to a saturated solution for preparing a semiconductor electrothermal film. Background technique [0002] Semiconductor electrothermal film technology is an electric heating technology, which can be widely used in the fields of industry, agriculture, military, household appliances and other fields where the operating temperature is below 500 ° C. It can be used in various surfaces such as plates and tubes. heated form. Semiconductor electrothermal film technology, Europe, America, Japan and other countries have carried out theoretical research on it since the 1940s, but so far there has not been a relatively mature electrothermal film element that can really be applied to a certain product. Since the end of the 1980s, a number of patents and components related to electrothermal film technology have appeared one after another in China. ...

Claims

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Application Information

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IPC IPC(8): H05B3/12
Inventor 罗敏吴增新李光根
Owner 罗敏
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