Unlock instant, AI-driven research and patent intelligence for your innovation.

Reaction chamber and plasma processing equipment

A reaction chamber and processed technology, applied in the separation field, can solve the problems of uneven temperature, uneven temperature, and poor process quality of the processed workpiece, and achieve improved process quality and yield, uniform radial temperature, and improved uniformity sexual effect

Active Publication Date: 2017-07-21
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the above-mentioned MOCVD equipment inevitably has the following problems in practical applications, namely: figure 2 As shown, since the magnetic field lines of the alternating magnetic field are densely distributed in the area close to the heating coil 4 than in the area far away from the heating coil 4, the magnetic field strength in the edge area of ​​the tray 2 is greater than that in the central area, thus causing the tray 2 The eddy current induced in the edge area of ​​the tray 2 is more than that in the center area, which causes the temperature of the edge area of ​​the tray 2 to be higher than the temperature of the center area, resulting in uneven temperature of the tray 2 along the radial direction, thus causing the load on the upper surface of the tray 2 The temperature of the processed workpiece is uneven, which leads to poor process quality and low yield
Moreover, in order to improve the uniformity of the temperature of the processed workpiece, the temperature of the central area and the edge area can be as close as possible by means of the heat conduction of the tray 2 itself and the heat radiation between adjacent trays 2, which requires a long time for uniform temperature. Time and additional insulation facilities, resulting in long process time and high production costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reaction chamber and plasma processing equipment
  • Reaction chamber and plasma processing equipment
  • Reaction chamber and plasma processing equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order for those skilled in the art to better understand the technical solution of the present invention, the reaction chamber and the plasma processing equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0027] image 3 A schematic diagram of the structure of the reaction chamber provided in the first embodiment of the present invention. Figure 4 for image 3 Magnetic field distribution in the reaction chamber. Please also refer to image 3 and Figure 4 , the reaction chamber 10 is provided with multi-layer trays 101 made of magnetically permeable materials, and arranged at intervals along the vertical direction to carry workpieces to be processed; and the reaction chamber 10 includes a heating unit for heating the trays 101 For heating, the heating unit includes an AC power supply (not shown in the figure), a heating coil 102 and an auxiliary coil 103 arranged around the outside of the si...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A reaction chamber and plasma processing equipment provided by the present invention are provided with multi-layer trays made of magnetically permeable materials to carry workpieces to be processed in the reaction chamber, and are arranged at intervals along the vertical direction, which includes heating the trays The heating unit includes an AC power supply, a heating coil and an auxiliary coil arranged around the side wall of the reaction chamber, the heating coil is located at a position corresponding to the area where the multi-layer tray is located, and is connected to the AC power supply, and adopts induction heating The tray is heated by means of a closed loop structure; the auxiliary coil itself is a closed loop structure located above the top and / or below the bottom of the heating coil to form an induced magnetic field when the heating coil is supplied with alternating current and to adjust the magnetic field formed by the heating coil. The distribution of the alternating magnetic field makes the radial temperature of each tray tend to be uniform. The reaction chamber provided by the invention can improve the uniformity of the temperature of the workpiece to be processed, thereby improving the process quality and yield rate.

Description

technical field [0001] The invention belongs to the field of semiconductor equipment manufacturing, in particular to a reaction chamber and a plasma [0002] Daughter processing equipment. Background technique [0003] Metal-organic Chemical Vapor Deposition (MOCVD) is a new type of vapor growth technology developed on the basis of vapor phase epitaxial growth, which can precisely control the thickness and composition of the epitaxial layer. Key technology of optoelectronic devices. The process quality of MOCVD equipment is related to the uniformity of gas flow and temperature in the reaction chamber, and the uniformity of temperature especially refers to the temperature uniformity of the area on the tray carrying the workpiece to be processed. [0004] At present, MOCVD equipment with a vertical structure is usually used, and the production capacity of the MOCVD equipment can be greatly increased by setting multi-layer carrier trays. figure 1 It is a simplified structura...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/46
Inventor 董志清
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD