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Substrate processing apparatus and method for manufacturing semiconductor device

A substrate processing device and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, coatings, etc., can solve problems such as adverse effects of substrate characteristics, and achieve the effect of suppressing the occurrence of by-products

Active Publication Date: 2015-04-15
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generated by-products adversely affect substrate properties

Method used

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  • Substrate processing apparatus and method for manufacturing semiconductor device
  • Substrate processing apparatus and method for manufacturing semiconductor device
  • Substrate processing apparatus and method for manufacturing semiconductor device

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Experimental program
Comparison scheme
Effect test

no. 1 approach ＞

[0047] (1) Structure of the substrate processing device

[0048] Below, use Figure 1 to Figure 3 The substrate processing apparatus according to the first embodiment of the present invention will be described. figure 1 is a cross-sectional view of the substrate processing apparatus of this embodiment.

[0049] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0050] (1) Structure of the substrate processing device

[0051] First, a substrate processing apparatus according to an embodiment of the present invention will be described.

[0052] The processing device 100 of this embodiment will be described. The substrate processing device 100 is a device for forming a thin film, such as figure 1 As shown, it is constructed as a monolithic substrate processing device.

[0053] Such as figure 1 As shown, the substrate processing apparatus 100 has a processing vessel 202 . The processing container 202 is configured, for e...

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PUM

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Abstract

Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.

Description

technical field [0001] The invention relates to a substrate processing device and a method for manufacturing a semiconductor device. Background technique [0002] In recent years, semiconductor devices such as flash memory tend to be highly integrated. Along with this, the pattern size is significantly miniaturized. When forming these patterns, a step of subjecting a substrate to a predetermined treatment such as oxidation treatment or nitriding treatment is performed as one of the manufacturing steps. [0003] As one of the methods of forming the above pattern, there is a step of forming a groove between circuits and forming a liner film or wiring there. This groove is formed with a high aspect ratio along with recent miniaturization. [0004] When forming a liner film, etc., it is also desired to form a film with good step coverage without variation in film thickness on the upper side, middle side, lower side, and bottom of the groove. This is because, by adopting a fi...

Claims

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Application Information

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IPC IPC(8): H01L21/22
CPCC23C16/455C23C16/4408C23C16/52C23C16/4412H01L21/02271C23C16/45542H01J37/32357H01J37/3244H01J37/32834H01J37/32862H01L21/02219H01L21/02274H01L21/0228H01L21/02164
Inventor 山本哲夫盛满和广丰田一行大野健治高崎唯史广濑育男佐佐木隆史
Owner KOKUSA ELECTRIC CO LTD