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A kind of preparation method of tem sample

A sample and suspended film technology, which is applied in the field of TEM sample preparation, can solve problems such as the difficulty in preparing MEMS samples with suspended films, the difficulty in filling MEMS samples, and affecting the accuracy of sample observation results, saving preparation time and simple methods Ease of implementation and integrity guaranteed

Active Publication Date: 2017-05-17
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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Problems solved by technology

[0005] In view of the above-mentioned shortcoming of prior art, the purpose of the present invention is to provide a kind of preparation method of TEM sample, is used to solve the problem that the existing TEM sample preparation technology is difficult to prepare the MEMS sample with suspending film, promptly is used to solve the problem that adopts Before preparing TEM samples by conventional methods, it is very difficult to fill MEMS samples with a suspended film structure. When MEMS samples are prepared directly using conventional TEM sample preparation methods without filling the suspended film structure, the FIB preparation process of the sample In the process, the suspended film structure will curl and separate from the underlying structure, and it is difficult to ensure the integrity of the sample during the entire sample preparation process, which will greatly affect the accuracy of the sample observation results.

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  • A kind of preparation method of tem sample
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  • A kind of preparation method of tem sample

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Embodiment Construction

[0036] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0037] see Figures 1 to 2i It should be noted that the illustrations provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, although only the components related to the present invention are shown in the drawings rather than the number and shape of components in actual implementation and size drawing, the type, quantity and proportion of each component can be changed arbitrarily duri...

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Abstract

The invention provides a method for preparing a TEM sample. The method comprises the following steps: firstly, transferring a suspension membrane in MEMS to a rapid empty Si chip, and performing ordinary sample preparation by using FIB, thereby achieving preparation of a TEM sample of the suspension membrane in MEMS. After being separated from a substrate, the suspension membrane is sucked in an electrostatic adsorption manner, so that the completeness of the suspension membrane is ensured to a maximum extent; the sucked suspension membrane is completely combined with the empty Si chip by using an AB adhesive, so that the TEM sample is not deformed or damaged in further FIB preparation process; moreover after the suspension membrane is transferred to the empty Si chip, the sample definitely has an Si substrate after being cut, in TEM observation, an electron beam can enter perpendicular to the interface of the sample through diffraction, and the accuracy of measured data is ensured; as the sample is prepared after the suspension membrane is transferred to the empty Si chip, the method is simple and feasible, and the time for preparing the sample is greatly shortened.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to the field of TEM sample preparation methods. Background technique [0002] TEM (Transmission Electron Microscope, Transmission Electron Microscope) is a very important tool used in the semiconductor manufacturing industry to detect the shape, size and characteristics of the thin films that make up the device. It uses high-energy electron beams as light sources and electromagnetic fields as lenses. The accelerated and focused electron beam is projected onto a very thin sample, and the electrons and atoms in the sample change direction due to collisions, resulting in solid angle scattering. The size of the scattering angle is related to the density and thickness of the sample, so images with different light and dark can be formed. One of the outstanding advantages of TEM is that it has high resolution and can observe the shape and size of extremely thin films. ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N1/28
Inventor 齐瑞娟王雪雨王小懿陈柳段淑卿
Owner SEMICON MFG INT (SHANGHAI) CORP