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A kind of graphene gas sensor and preparation method thereof

A gas sensor and graphene technology, applied in the sensor field, can solve the problems affecting the stability and reusability of the device, easy to break and pollute, difficult to integrate, etc., to achieve suitable for batch preparation, reduce size, and good repeatability. Effect

Active Publication Date: 2017-02-01
BEIJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Although the research on graphene gas sensors has made great progress, however, the graphene gas sensors used in the reported graphene gas sensors are directly exposed to the environment, which is easy to be damaged and polluted, which seriously affects the stability and repeatability of the devices. Usability, but also has the disadvantages of large volume, difficult integration, and the need for a vacuum test chamber during work
In addition, graphene gas sensors that can be used to build a lab-on-a-chip have not been reported.

Method used

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  • A kind of graphene gas sensor and preparation method thereof
  • A kind of graphene gas sensor and preparation method thereof
  • A kind of graphene gas sensor and preparation method thereof

Examples

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Effect test

Embodiment 1

[0052] Example 1: Preparation of a graphene gas sensor with III-V group InGaAs / GaAs self-rolling microtubes as a carrier on a Si(100) substrate

[0053] S1: Depositing an AlAs sacrificial layer on a Si substrate;

[0054] After cleaning the Si wafer, put the substrate into the MOCVD reaction chamber; 2 Bake the Si sheet under the atmosphere for 30 minutes, then pass through the AsH 3 Passivate for 30 minutes; cool down to 420°C, grow a low-temperature GaAs nucleation layer with a thickness of 70nm; raise the temperature to 630°C, grow an intermediate temperature GaAs buffer layer with a thickness of 300nm; raise the temperature to 685°C, grow a high-temperature GaAs epitaxial layer with a thickness of 2μm;

[0055] Perform thermal cycle annealing (TCA) on the GaAs epitaxial layer; lower the temperature to 685° C., and grow an AlAs sacrificial layer with a thickness of 50 nm.

[0056] S2: Depositing an InGaAs / GaAs strained thin film on the AlAs sacrificial layer to obtain a w...

Embodiment 2

[0081] Embodiment 2: Prepare Si / SiO on Si substrate 2 Graphene gas sensor supported by self-curling microtubes

[0082] S1: A 40nm thick Ge sacrificial layer and a 20nm thick Si were successively grown on a Si(100) substrate by using MBE.

[0083] S2: Put it into PECVD and evaporate 25nm thick SiO 2 , with Si / SiO 2 Strained bilayer wafers.

[0084] S3: disperse the graphene oxide and phenolphthalein assembling agent prepared by the Hummers method in a mixed solvent of ethanol and water, and perform ultrasonic treatment at a frequency of 45 kHz for 1.5 hours to obtain a mixed solution of graphene oxide and phenolphthalein. The resulting mixed solution was formed into a film on a wafer, and subjected to heat treatment at 60° C. for 24 hours to reduce the self-assembled film to obtain a reduced graphene oxide film.

[0085] S4: The first photolithography and etching to make the reduced graphene oxide film and Si / SiO 2 Strained bilayers form mesas and enable corrosion of redu...

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Abstract

The embodiment of the invention discloses a graphene gas sensor and a preparation method thereof. The preparation method comprises the following steps: sequentially deposing a sacrificial layer and a strain membrane on a substrate firstly, then directly preparing a graphene layer on the strain membrane, or transferring the prepared graphene layer onto the strain membrane, forming a mesa by virtue of lithography and corrosion, and meanwhile, exposing the sacrificial layer; then continuously deposing a metal electrode on the graphene layer; and finally, laterally corroding the sacrificial layer to enable the strain membrane to separate from the substrate and self curling to form a tube, and obtaining the curled graphene gas sensor which is adhered to the inner wall of the tube. The graphene gas sensor has high sensitivity to various gas molecules, has a three-dimensional structure, is small in device size, simple in preparation method and low in cost and is suitable for mass production. In addition, according to the graphene gas sensor disclosed by the embodiment of the invention, with the tubular structure with controllable diameter, a natural conveying channel for a gas to be detected is provided, and the tubular structure can also be integrated with other on-chip micro-nano function units to construct a chip laboratory.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a graphene gas sensor and a preparation method thereof. Background technique [0002] In recent years, gas sensors have played an increasingly important role in the fields of national defense security, industrial production, food safety, medicine and health, and environmental monitoring. Traditional gas sensors have disadvantages such as poor detection performance, many chip components, large volume, and difficulty in integration. Especially with the continuous development of micro-nano technology, researchers increasingly hope to integrate multiple discrete devices with specific functions On a tiny chip, made "chip laboratory" (Lab-on-a-chip). Therefore, the preparation of micro-nano gas sensors with good stability, reusability, and easy integration in lab-on-a-chip has attracted great interest. [0003] Graphene, as an emerging carbon nanomaterial, has excellent electrical, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/00
Inventor 王琦毛国明高云霞任晓敏
Owner BEIJING UNIV OF POSTS & TELECOMM
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