System for picosecond pulse test of device units of phase change memory

A phase-change memory and pulse test technology, applied in static memory, instruments, etc., can solve problems such as no test system

Inactive Publication Date: 2015-04-29
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0005] Therefore, in order to promote the research progress of the corresponding memory, it is very important to characterize the electrical and storage properties of its device cells (such as threshold voltage and current, read / write / erase operating parameters, fatigue characteristics, etc.), but due to the current Still in the research and development stage, there is no relevant test system at home and abroad

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  • System for picosecond pulse test of device units of phase change memory
  • System for picosecond pulse test of device units of phase change memory
  • System for picosecond pulse test of device units of phase change memory

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Embodiment 1

[0038] The test system is composed of a main control computer, a picosecond pulse signal generator, a digital source meter, a high-speed oscilloscope and a device fixture box. The main control computer is connected to the picosecond level high-speed pulse signal generator and the digital source meter through the GPIB interface bus. Connect the pulse signal generator and digital source meter to the biaser in the fixture box through the control cable. The main control computer transmits commands and collects data between the pulse signal generator and the digital source meter through the GPIB card. The two probes of the device fixture box are respectively connected to the upper electrode and the lower electrode of the phase change memory, forming a complete memory unit test connection circuit. Adjust and control the four test modules of current and voltage, voltage and current, resistance and write pulse height, resistance and wipe pulse height in the operating software, and coo...

Embodiment 2

[0041] Change the voltage-current test module used in embodiment 1 into a resistance and write pulse height test module, and the specific test parameters are as follows: the pulse current amplitude test range is 0-7.5V, the pulse width is 8000ps, and the rest are the same as in embodiment 1 , record the corresponding pulse height and resistance value to get the resistance-pulse height curve (such as Image 6 shown). Depend on Image 6 It is known that when the pulse amplitude is less than 4V, the resistance is very low, and the phase change film is still in a polycrystalline state, because the phase change material will not melt under smaller energy, so the amorphous state cannot be obtained. As the pulse amplitude increases, the resistance increases rapidly, indicating that the phase change material has been melted and transformed into a high-resistance amorphous state. When the pulse amplitude is greater than 4V, increasing the pulse amplitude has no effect on increasing t...

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Abstract

The invention relates to a system for a picosecond pulse test of device units of a phase change memory. The system comprises a main control computer, a picosecond pulse signal generator, a digital source meter and a device clamp box, wherein the main control computer is connected with the picosecond pulse signal generator and the digital source meter respectively; the picosecond pulse signal generator and the digital source meter are also connected with a biasing device in the device clamp box respectively; two probes of the device clamp box are connected with an upper electrode and a lower electrode of a tested phase change memory respectively to form a complete memory unit test connection loop; and the main control computer performs command and data transmission by virtue of control software to realize transmission of commands and acquisition of data. The system provided by the invention can be used for characterizing electrical and memory properties of the device units.

Description

technical field [0001] The invention relates to a high-performance testing technology for a phase-change memory device unit in the technical field of micro-nano electronics, in particular to a picosecond-level pulse test system for a phase-change memory device unit. Background technique [0002] Phase change storage technology is based on the phase change proposed by Ovshinsky in the late 1960s (Phys. Rev. Lett., 21, 1450-1453, 1968) and the early 1970s (Appl.phys.lett., 18, 254-257, 1971). The idea that thin films can be applied to phase-change storage media is established, and it is a memory device with low price and stable performance. Phase-change memory can be made on silicon substrates, and its key materials are recordable phase-change films, heating electrode materials, heat insulating materials, and lead-out electrode materials. The basic principle of phase change memory is to use electric pulse signal to act on the device unit, so that the phase change material und...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/08
Inventor 霍如如王玉婵蔡道林陈小刚陈一峰朱敏宋志棠
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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