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Method and wafer structure for processing a wafer

A technology for processing wafers and wafers, which is applied to semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., and can solve problems such as large waste and slow spin coating

Active Publication Date: 2018-02-16
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With spin coating, the entire wafer can be covered with a given material, but spin coating is much slower than the previous processes and produces a lot of waste

Method used

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  • Method and wafer structure for processing a wafer
  • Method and wafer structure for processing a wafer
  • Method and wafer structure for processing a wafer

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Embodiment Construction

[0016] The following detailed description refers to the accompanying drawings, which show by way of illustration given details and embodiments in which the invention may be practiced.

[0017] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment or design described herein as "exemplary" is not necessarily preferred or preferred over other embodiments or designs.

[0018] Herein, the term "over" as used in reference to a deposited material formed "on" a face or surface may be used to mean that the deposited material may be formed "directly" on the implied face or surface, e.g. touch. In this context, the term "over" as used in relation to a deposition material formed "on" a face or surface may be used to indicate that the deposition material may pass through a One or more additional layers are formed "indirectly" on the implied face or surface.

[0019] The present disclosure provides an improved method of printing th...

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Abstract

The present invention provides methods and wafer structures for processing wafers. A method for processing a wafer according to various embodiments may include: removing wafer material from an inner portion of a wafer to form a structure at an edge region of the wafer at least partially surrounding the inner portion of the wafer; and using the The structure acts as a printing mask, printing material into the interior portions of the wafer. A method for processing a wafer according to various embodiments may include providing a carrier and a wafer having a first side and a second side opposite the first side, wherein the first side of the wafer a surface attached to the carrier, the second surface having a structure at an edge region of the wafer, the structure at least partially enclosing an interior portion of the wafer; and printing material onto the wafer's on at least a portion of the second side.

Description

technical field [0001] Various embodiments relate generally to methods for processing wafers, and to wafer structures. Background technique [0002] Printing methods such as stencil printing or screen printing can be used in semiconductor technology to produce layers on the wafer, eg on the back side of the wafer. However, using current methods, it is difficult to make layers thinner than about 25 μm. Current fabrication methods have large variations in layer uniformity. The backside of the wafer is coated using techniques such as screen printing, stencil printing or spin coating in various conventional methods. With stencil printing, it is difficult to obtain a uniform coating thickness over the entire area of ​​the wafer. This non-uniform arrangement of material on the wafer can lead to the formation of additional stress lines within the wafer, which can lead to cracking of the wafer during dicing, especially when the wafer is extremely thin. The stencil thickness may ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L29/06
CPCH01L21/6835H01L2221/6834H01L2221/68327H01L24/83H01L2924/12042H01L2224/03002H01L2224/27002H01L2224/29036H01L2224/29021H01L2224/29035H01L2224/27005H01L24/03H01L24/05H01L24/27H01L24/29H01L24/30H01L24/32H01L24/94H01L2224/04026H01L2224/0508H01L2224/05082H01L2224/05083H01L2224/05084H01L2224/05571H01L2224/05624H01L2224/05639H01L2224/05647H01L2224/05655H01L2224/05664H01L2224/05666H01L2224/05671H01L2224/05687H01L2224/2732H01L2224/29011H01L2224/29014H01L2224/29023H01L2224/29111H01L2224/29147H01L2224/2919H01L2224/2929H01L2224/29339H01L2224/29347H01L2224/29393H01L2224/32245H01L2224/94H01L2224/2747H01L2224/29294H01L2924/00H01L2924/00014H01L2924/01023H01L2924/01015H01L2924/04941H01L2924/01014H01L2924/01029H01L2224/05155H01L2224/05166H01L2224/05124H01L2224/05187H01L2924/0665H01L2924/01006H01L2924/0105H01L2924/01047H01L2924/00012H01L2224/03H01L2224/27H01L2924/0781H01L2924/07802H01L21/4814H01L23/49838H01L21/288H01L23/562
Inventor S·R·耶杜拉K·H·加瑟S·韦勒特K·迈尔F·J·桑托斯罗德里奎兹
Owner INFINEON TECH AG