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Image sensing unit and method for forming the same

A sensing unit and image technology, applied in the direction of radiation control devices, etc., to achieve the effects of improving efficiency, increasing transmission distance, and increasing sensitivity

Active Publication Date: 2017-09-22
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The performance of existing organic image sensors still needs to be further improved

Method used

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  • Image sensing unit and method for forming the same
  • Image sensing unit and method for forming the same
  • Image sensing unit and method for forming the same

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Experimental program
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Embodiment Construction

[0031] As mentioned in the background art, the performance of the organic image sensor formed in the prior art still needs to be further improved.

[0032] Studies have found that a major factor affecting the performance of organic image sensors is the contact area between the organic photoelectric conversion layer and the pixel electrode, and increasing the contact area between the organic photoelectric conversion layer and the pixel electrode can improve the pixel electrode's performance for organic photoelectric conversion. The charge collection capability of the layer. Without increasing the volume of the pixel electrode, increasing the contact area between the pixel electrode and the organic photoelectric conversion layer is an effective method to improve the performance of the organic image sensor. Another important factor is the length of the propagation path of light in the photoelectric conversion layer. Improving the propagation path of incident light in the photoele...

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Abstract

An image sensing unit and a forming method thereof, the forming method of the image sensing unit comprising: providing a substrate, a metal plug is formed in the substrate, the surface of the metal plug is flush with the surface of the substrate; forming a covering The dielectric layer on the surface of the base and the surface of the metal plug; forming a mask layer with an opening on the surface of the dielectric layer, the opening is located directly above the surface of the metal plug; etching the dielectric layer along the opening, forming a groove, the bottom of the groove exposes the top surface of the metal plug; removing the mask layer; forming a pixel electrode layer on the inner wall surface of the groove; groove and cover the organic photoelectric conversion layer of the dielectric layer. The above method can improve the performance of the image sensing unit.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an image sensing unit and a forming method thereof. Background technique [0002] An image sensor, or photosensitive element, is a device that converts an optical image into an electronic signal, and it is widely used in digital cameras and other electronic optical devices. Early image sensors used analog signals, such as video camera tubes. Today, traditional image sensors are mainly divided into two types: charge-coupled device (CCD) and complementary metal-oxide-semiconductor active pixel sensor (CMOS Active pixel sensor). The aforementioned image sensor mainly receives light signals through silicon photodiodes and converts the light signals into electrical signals. Traditional image sensors are bulky, and their sensitivity and light-receiving range need to be further improved. [0003] The organic image sensor is a new type of image sensor. The existing organic imag...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 三重野文健
Owner SEMICON MFG INT (SHANGHAI) CORP