Variable resistor simulation modeling method and circuit in RRAM storage unit

A storage unit, simulation modeling technology, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve the problems of long simulation time, large simulation files, etc., to reduce the amount of calculation, shorten the verification time, improve the Verify the effect of efficiency

Active Publication Date: 2015-05-20
XI AN UNIIC SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In order to solve the technical problems of long simulation time and large simulation files in the existing simulation modeling method, the present invention provides a variable resistance simulation circuit and method in an RRAM storage unit

Method used

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  • Variable resistor simulation modeling method and circuit in RRAM storage unit
  • Variable resistor simulation modeling method and circuit in RRAM storage unit
  • Variable resistor simulation modeling method and circuit in RRAM storage unit

Examples

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[0066] (1) The state detection circuit 12 can be realized by a delay device (a voltage-controlled current source VCCS device) in the available Hspice emulator library, such as: Gdelay VR_DL 0 DELAY VR 0 TD=50ns SCALE=1;

[0067] (2) Voltage-controlled switches (131, 132, 133, 134) in the state judgment control circuit 13 can be realized by G (voltage-controlled current source VCCS) device in the Hspice storehouse, such as: Gsw vdd NETR VCR PWL (1) RESP RESN' vset-1m', 100G'vset+1m', 1;

[0068] The RS latch 135 is available as a G (Voltage Controlled Current Source VCCS) device in the Hspice library as Figure 9 The circuit is constructed; RS latch 135 includes a first NOR gate, a second NOR gate and an INV gate INV, one input terminal of the first NOR gate is the S terminal, and the other input terminal of the first NOR gate The terminal is connected to the output terminal of the second NOR gate, one input terminal of the second NOR gate is the R terminal, the other input te...

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Abstract

The invention relates to a variable resistor simulation modeling method and circuit in an RRAM storage unit. The circuit comprises a state detection circuit, a state judgment control circuit and a state conversion circuit, wherein the state detection circuit is used for carrying out delayed processing on pure voltage pulse VR at the two ends of a variable resistor to obtain voltage signals VR_DL; the state judgment control circuit is used for comparing the voltage signals VR_DL with state overturning threshold voltage (Vset and Vreset), and the overturning state of the variable resistor is determined; the state conversion circuit is used for determining the equivalent resistance value of the variable resistor according to the determined overturning state of the variable resistor. The variable resistor simulation modeling method and circuit in the RRAM storage unit resolve the technical problems that an existing simulation modeling method is long in simulation time, and a generated simulation file is too large, can relatively actually fit the electric characteristic of the variable resistor, and reflects the characteristics of the memory or storage information under different work conditions of the variable resistor.

Description

technical field [0001] The invention relates to a variable resistance simulation modeling method and circuit in an RRAM storage unit. Background technique [0002] Resistive random access memory (RRAM) is a new type of non-volatile information storage technology, and its storage unit is a variable resistor realized by a metal oxide (such as WOx, HfOx, TiOx, NiOx, etc.). [0003] According to the actual measurement data of the varistor, the method of building a model can more realistically fit the DC and AC electrical characteristics of the varistor, and reflect the memory or storage information characteristics of the varistor under different working conditions. The established simulation model can serve the simulation verification of the design of the resistive random access memory storage unit, effectively help the designer to determine whether the working conditions of the peripheral circuit of the storage unit are correct, improve the reliability of the memory chip design...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 谢永宜
Owner XI AN UNIIC SEMICON CO LTD
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