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A simulation modeling circuit of variable resistance in rram storage unit

A storage unit, simulation modeling technology, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve the problems of long simulation time and large simulation files, reducing the amount of calculation, reducing research and development costs, and shortening verification. effect of time

Active Publication Date: 2018-05-08
XI AN UNIIC SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In order to solve the technical problems of long simulation time and large simulation files in the existing simulation modeling method, the present invention provides a variable resistance simulation circuit in an RRAM storage unit

Method used

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  • A simulation modeling circuit of variable resistance in rram storage unit
  • A simulation modeling circuit of variable resistance in rram storage unit
  • A simulation modeling circuit of variable resistance in rram storage unit

Examples

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specific example

[0066] (1) The delay device (a kind of voltage-controlled current source VCCS device) in available Hspice emulator library of state detection circuit 12 realizes, as: Gdelay VR_DL 0DELAY VR 0TD=50ns SCALE=1;

[0067] (2) Voltage-controlled switches (131, 132, 133, 134) in the state judgment control circuit 13 can be realized by G (voltage-controlled current source VCCS) device in the Hspice storehouse, such as: Gsw vdd NETR VCR PWL (1) RESP RESN' vset-1m', 100G'vset+1m', 1;

[0068] The RS latch 135 is available as a G (Voltage Controlled Current Source VCCS) device in the Hspice library as Figure 9 The circuit is constructed; RS latch 135 includes a first NOR gate, a second NOR gate and an INV gate INV, one input terminal of the first NOR gate is the S terminal, and the other input terminal of the first NOR gate The terminal is connected to the output terminal of the second NOR gate, one input terminal of the second NOR gate is the R terminal, the other input terminal of th...

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Abstract

The invention relates to a variable resistance simulation modeling circuit in an RRAM storage unit, which includes a state detection circuit, a state judgment control circuit and a state conversion circuit. The state detection circuit is used to delay the net voltage pulse VR at both ends of the variable resistance to obtain The voltage signal VR_DL; the state judgment control circuit is used to compare the voltage signal VR_DL with the state inversion threshold voltage (Vset, Vreset) to determine the inversion state of the variable resistor; the state conversion circuit is used to determine the inversion state according to the determined variable resistor Equivalent resistance value of variable resistor. The present invention solves the technical problems of long simulation time and large simulation files in the existing simulation modeling method. The present invention can more realistically fit the electrical characteristics of the variable resistor and reflect the characteristics of the variable resistor under different working conditions. The property of remembering or storing information.

Description

technical field [0001] The invention relates to a variable resistance simulation modeling circuit in an RRAM storage unit. Background technique [0002] Resistive random access memory (RRAM) is a new type of non-volatile information storage technology, and its storage unit is a variable resistor realized by a metal oxide (such as WOx, HfOx, TiOx, NiOx, etc.). [0003] According to the actual measurement data of the varistor, the method of building a model can more realistically fit the DC and AC electrical characteristics of the varistor, and reflect the memory or storage information characteristics of the varistor under different working conditions. The established simulation model can serve the simulation verification of the design of the resistive random access memory storage unit, effectively help the designer to determine whether the working conditions of the peripheral circuit of the storage unit are correct, improve the reliability of the memory chip design, and thus ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 谢永宜
Owner XI AN UNIIC SEMICON CO LTD
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