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SRAM (Static Random Access Memory) module and sensitivity amplifier circuit thereof

A technology of sensitive amplifiers and operational amplifier circuits, which is applied in the electronic field, can solve the problem of no reduction in leakage current power consumption, and achieve the effects of reducing power consumption, reducing pre-charging time, and reducing static power consumption

Inactive Publication Date: 2015-05-20
SHENZHEN STATE MICROELECTRONICS CO LTD
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  • Abstract
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Problems solved by technology

However, for this module, the leakage current power consumption of the module in the working state has not been reduced

Method used

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  • SRAM (Static Random Access Memory) module and sensitivity amplifier circuit thereof
  • SRAM (Static Random Access Memory) module and sensitivity amplifier circuit thereof
  • SRAM (Static Random Access Memory) module and sensitivity amplifier circuit thereof

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Embodiment Construction

[0014] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0015] figure 2 It is a structural block diagram of the sense amplifier circuit provided by the embodiment of the present invention; for the convenience of description, only the parts related to this embodiment are shown, as shown in the figure:

[0016] The sense amplifier circuit includes a pre-charge circuit unit 200 , an operational amplifier circuit unit 300 and an input-output circuit unit 400 which are sequentially connected to each other. As an improvement, the sense amplifier circuit further includes a pre-charge control circuit unit 100 . The pre-charging control circuit unit 100 is di...

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Abstract

The invention belongs to the electronic field and in particular relates to an SRAM (Static Random Access Memory) module and a sensitivity amplifier circuit of the SRAM module. A precharging control circuit unit connected with a precharging circuit unit is adopted, low-level pulse is generated at the output end of a precharging control circuit in a process that a control signal of the precharging control circuit unit is changed into 1 from 0, the sensitivity amplifier circuit can precharge the circuit in a low-level pulse stage; the precharging time can be controlled through control of the pulse width; and when the control signal is in a fixed signal status for a long time, the circuit is not precharged, and therefore, the precharging time of the circuit and unnecessary precharging operation to an idle amplifier can be reduced, the precharging time of the whole circuit module is reduced, the static power consumption of the circuit is reduced and the power consumption of the chip can be reduced.

Description

technical field [0001] The invention belongs to the field of electronics, in particular to an SRAM storage module and a sensitive amplifier circuit thereof. Background technique [0002] With the rapid development of integrated circuits, the feature size of transistors is gradually reduced, and the operating voltage of circuits is continuously reduced, which effectively reduces the power consumption of chips. However, the working voltage of the chip has not been greatly reduced with the continuous shrinking of the process size, and the threshold voltage of the transistor has not been greatly reduced; in order for the transistor to work normally, it must meet a certain working voltage, the working voltage of the chip Unlimited reduction is impossible. Therefore, the power consumption of chips has become one of the factors restricting the development of chips. Reducing the power consumption of chips has become an important task for integrated circuit designers. Especially as ...

Claims

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Application Information

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IPC IPC(8): G11C11/413
CPCG11C11/419
Inventor 胡瑞明吴志远陈治
Owner SHENZHEN STATE MICROELECTRONICS CO LTD
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