Memory and Sense Amplifiers

A technology for sensitive amplifiers and control terminals, applied in the field of memory and sensitive amplifiers, can solve the problems of unreadable and slowed memory reading speed, and achieve the effects of reducing pre-charging time, increasing reading speed, and enhancing channel conductivity
CN102290086BActive Publication Date: 2015-11-11SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Publication Date
2015-11-11

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Abstract

A memory and a sensitive amplifier, the sensitive amplifier includes a current mirror unit, the current mirror unit includes: an input transistor with a control terminal, a first terminal and a second terminal, the second terminal of which is connected to a data line node, and the first terminal of which connected to a voltage source; a mirror transistor having a control terminal, a first terminal and a second terminal, the second terminal of which is connected to the data node, the first terminal of which is connected to the voltage source, and the control terminal of which is connected to the control terminal of the input transistor; the first impedance element, Its first end is connected to the second end of the input transistor, and the second end of the first impedance element is connected to the control end of the input transistor; the pull-up current source, one end of which is connected to the first end of the first impedance element, and the other end is connected to the voltage source; a pull-down current source, one end of which is connected to the second end of the first impedance element, and the other end is grounded, and the current value of the pull-down current source is equal to the current value of the pull-up current source. The sensitive amplifier of the invention improves the reading speed of the memory under the lower operating voltage source.
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Description

technical field

[0001] The invention relates to a memory circuit, in particular to a memory and a sensitive amplifier. Background technique

[0002] Sensitive amplifier (SA, SenseAmplifier) ​​is an important part of the memory, which directly affects the reading speed of the memory. Sense amplifiers sense small signal changes on bit-lines and amplify the small signal changes to obtain data stored on memory cells. Before sensing small signal changes on the bit-line, the bit-line adjustment unit of the sense amplifier will adjust the bit-line voltage to a fixed value, so that the bit-line voltage can be stabilized as soon as possible, and then it can sense a stable voltage when reading. bit line current.

[0003] figure 1 It is a circuit diagram of an existing sensitive amplifier of a memory, including:

[0004] The precharge unit 11 charges the data line node when the bit line is precharged, including: a precharge transistor mp, whose control terminal (gate) is connected ...

Claims

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