A non-conductive layer structure of a semiconductor component and its manufacturing method

Abstract

The invention discloses a non-conductive layer structure of a semiconductor assembly, which comprises a blocking metal layer and an inner-layer dielectric layer formed above the blocking metal layer. The inner-layer dielectric layer is internally provided with through holes; dielectric windows connected with the through holes are formed on the inner-layer dielectric layer; the inner-layer dielectric layer comprises a first non-conductivity material layer and a second non-conductivity material layer; the second non-conductivity material layer is also coated with a layer of silicon oxynitride; a third non-conductivity material layer is arranged above the silicon oxynitride layer; and the through holes pass through the silicon oxynitride layer and the third non-conductivity material layer. The method comprises steps: (1) the inner-layer dielectric layer is deposited; (2) the through holes are corroded; and (3) the dielectric windows are formed. Corrosion of the through holes and the widths of the dielectric windows are obviously improved, feasibility of mass production is greatly enhanced, and as a gas high in a fluorine-to-carbon ratio do not need to be chosen for corrosion, the corrosion cost is reduced.

Description

technical field [0001] The invention relates to a semiconductor component, in particular to a non-conductive layer structure of a semiconductor component and a manufacturing method thereof. Background technique [0002] As the electrical density of semiconductor devices increases and the size of the devices shrinks, in order to effectively interconnect the semiconductor devices on the semiconductor chip, it is necessary to increase the number of patterned metal layers and reduce the spacing between metal lines in each layer. The metal interconnects of different layers are separated by insulating materials or thin layers, which are commonly referred to as inter-internal dielectric layers (ILD), non-conductive layers. These insulating layers with via etch or trenches are filled with conductive material to form vias or plugs to connect the metal layer to the next metal layer. [0003] In the current high-voltage process, due to customer reliability issues, it is impossible to ...

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Problems solved by technology

[0003] In the current high-voltage process, due to customer reliability issues, it is impossible to refer to the existing logic process: that is, after metal cobalt deposition, silicon oxynitride is deposited as a stop layer for via corrosion and a barrier layer for subsequent plasma damage

This layer (silicon oxynitride layer) can only be placed after the metal aluminum M1 is corroded, resulting in a smaller IMD1 deposition window, and at the same time, the problem of metal aluminum M1 leakage is derived, such as figure 1 shown

[0004] In the prior art, the metal aluminum M1 is used to deposit a silicon oxynitride layer to replace the stop layer for via hole corrosion. The above-mentioned solution also causes the IMD1 deposition window to become smaller. At this time, the plasma during chemical deposition must be strengthened. body strength, to improve and prevent the appearance of IMD1 voids, and due to the strengthening of the plasma intensity, the unsaturated bonded silicon element content of the silicon oxynitride layer must increase, thus deriving the problem of metal aluminum leakage, so that it must Strictly controlling the silicon content of silicon oxynitride increases the difficulty of mass production and maintenance, resulting in frequent machine shutdowns and reduced availability

In addition, due to the removal of the stop layer for through-hole corrosion, the selectivity ratio of through-hole corrosion to cobalt must be increased. At this time, a gas with a higher ratio of carbon to fluorine must be used for corrosion, which greatly increases the cost of corrosion.

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