A vertical constant current diode

A constant current diode, vertical technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor constant current capability, low breakdown voltage, low pinch-off voltage, etc., to save manufacturing costs, constant current capability Good, high dynamic impedance effect

Active Publication Date: 2017-10-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Aiming at the problems of high pinch-off voltage, low breakdown voltage and poor constant current capability of constant current diodes, the present invention proposes a vertical constant current diode and its manufacturing method. The vertical constant current diode of the present invention realizes relatively Low pinch-off voltage, higher breakdown voltage and better constant current capability; and the terminal structure and cell structure of the vertical constant current diode of the present invention can be formed at the same time, which simplifies the process and reduces the cost

Method used

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Embodiment

[0049] This embodiment takes a vertical constant current diode with a withstand voltage of 250V and a current of about 1.5E-5A / μm as an example to describe the technical solution of the present invention in detail.

[0050] With the help of TSUPREM4 and MEDICI simulation software for example figure 2 The cell of the vertical constant current diode shown in the process simulation is carried out. The simulation parameters are: the thickness of the initial silicon wafer is about 250 μm, and the concentration of N-type heavily doped substrate 2 is 1E19cm -3 ; N-type lightly doped epitaxial layer 3 has a thickness of 22 μm and a concentration of 8E14cm -3 The depth of the symmetrical two first diffused P-type well regions 4 is about 5 μm, the width is about 11.2 μm, the distance between the two first diffused P-type well regions 4 is 8 μm, and the dose of boron implanted is about 1.5E13cm -2 , the implantation energy is 120keV, and the push junction time is 200 minutes; -2 , the...

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Abstract

The invention provides a vertical constant current diode and a manufacturing method thereof, belonging to the technical field of semiconductors. The vertical constant current diode of the present invention includes a sequentially connected cell structure and a terminal structure, the cell structure is composed of a plurality of cells with the same structure and connected in sequence, and the terminal structure is composed of a cut-off ring and a plurality of sequentially connected field Confining ring composition, the cells are embedded between the first N-type heavily doped region and the N-type lightly doped epitaxial layer, and embedded in the upper surface of the first P-type diffused well region to form a depletion channel region. The vertical type channel region of the present invention The constant current diode uses the depletion-type channel region to conduct electricity, so that the depletion-type channel region is pinched off earlier than the JFET region, and the pinch-off voltage is lower than 5V; and when the depletion-type channel is pinched off, the current does not increase with the voltage Large and enlarged, high dynamic impedance, good constant current capability.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a vertical constant current diode. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. A constant current diode (CRD, Current Regulative Diode) is a semiconductor constant current device, that is, a diode is used as a constant current source instead of an ordinary constant current source composed of transistors, Zener tubes and resistors. Currently, constant current diodes The output current is between a few milliamps and tens of milliamperes, which can directly drive the load, achieving the purpose of simple circuit structure, small device size and high device reliabilit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
Inventor 乔明张康何逸涛代刚张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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