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SOI lateral constant current diode and manufacturing method thereof

A constant-current diode, horizontal technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., to achieve good constant-current characteristics, prevent adverse effects, and high dynamic impedance

Pending Publication Date: 2019-11-22
成都矽能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current constant current devices have adverse effects caused by substrate leakage currents in integrated systems

Method used

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  • SOI lateral constant current diode and manufacturing method thereof
  • SOI lateral constant current diode and manufacturing method thereof
  • SOI lateral constant current diode and manufacturing method thereof

Examples

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Embodiment Construction

[0046] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0047] Such as Figure 1-2 As shown, the SOI lateral constant current diode provided in Embodiment 1 of the present invention is formed by interdigitated connection of a plurality of cells with the same structure, and the cells include a substrate 0, a buried oxide layer 1, a first conductivity type light Doped silicon 2, second conductivity type diffused well region 3, first conductivity type channel injection region 4, second conductivity type heavily doped region 5, first heavily doped region 6, second heavily doped region 7, An oxide dielectric layer 8, a metal anode 9 and a metal cathode 10, the first heavily doped region 6 and the second heavily doped region 7 are of the first conductivity type;

[0048] The ...

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Abstract

The invention provides an SOI lateral constant-current diode and a manufacturing method thereof, and belongs to the technical field of semiconductor power devices. The lateral constant current diode is formed by connecting a plurality of cell interdigitals with the same structure; the cell comprises a substrate, a buried oxide layer, first conductive type lightly doped silicon, a second conductivetype diffusion well region, a first conductive type channel injection region, a second conductive type heavily doped region, a first heavily doped region, a second heavily doped region, an oxidationmedium layer, a metal anode and a metal cathode, wherein the first heavily doped region and the second heavily doped region are of the first conductivity type. The constant-current diode adopts the SOI technology, and adverse effects caused by substrate leakage current in an integrated system can be effectively prevented.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to an SOI lateral constant current diode and a manufacturing method thereof. Background technique [0002] As a branch of stable power supply, constant current source has developed rapidly in recent years. The core device constituting the constant current source has entered the semiconductor integrated circuit stage from the ballast tube of the early electric vacuum structure. The application of constant current source has expanded from the traditional stable electromagnetic field, calibrated ammeter, etc. to emerging technology fields such as sensing technology. Due to the influence of the LED industry and the demand for high-performance voltage-stable power supplies and equipment current-limiting protection in the application field, research on high-performance, low-cost constant-current drive technology has become the focus of industry competition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L29/06H01L29/861H01L21/329
CPCH01L27/1207H01L29/8613H01L29/6609H01L29/0603
Inventor 乔明何林蓉邓琪
Owner 成都矽能科技有限公司
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