An air inlet device, reaction chamber and plasma processing equipment

Abstract

The invention relates to an air-intake device, a reaction cavity and plasma processing equipment. The air-intake device comprises an air-intake pipeline, a plurality of air-outlet pipelines, a proportional control device and a rotary driving device, wherein a driving shaft of the rotary driving device is connected with the proportional control device and is used for controlling the proportional control device to rotate around a center shaft of the proportional control device; a second air inlet communicated with the air-intake pipeline is formed in one end of the proportional control device; second air-outlet groups are formed in the side surface of the proportional control device; each second air-outlet group comprises a plurality of second air outlets; each group of second air outlets comprises the second air outlets communicated with the second air inlet; the number of the second air outlets in each group of second air outlets is equal to the number of the air-outlet pipelines; the second air outlets of each group of second air outlets are correspondingly communicated with a plurality of first air inlets one by one; when being communicated with the corresponding first air inlet, each second air outlet is opened. The air-intake device can control the distribution of process air in a cavity within a larger range, so that the air-intake device is more widely applied to process environments.

Description

technical field [0001] The invention relates to the field of semiconductor equipment manufacturing, in particular to an air intake device, a reaction chamber and plasma processing equipment. Background technique [0002] Plasma processing equipment is mainly used for etching, deposition and other processes on the workpiece to be processed. Taking the etching process of the workpiece processed by the plasma processing equipment as an example, the specific process is: during the process, the process gas is introduced into the reaction chamber, and the process gas is excited into plasma; The ions bombard the workpiece or react chemically with the workpiece to complete the etching of the workpiece. [0003] figure 1 It is a structural schematic diagram of the existing plasma processing equipment. Please see figure 1 , the plasma processing equipment includes a reaction chamber 1, an electrostatic chuck 2, an air inlet device 3, an induction coil 4, a radio frequency power su...

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Problems solved by technology

[0005] In actual use, the above air intake device 3 inevitably has the following problems, that is: the air intake device 3 adjusts the flow rate of the process gas passing through its two gas paths by controlling the opening and closing of the pneumatic valve 8 on each gas path. The ratio of the volume flow, which makes the adjustable range of the ratio of the volume flow of the process gas through the two gas paths of the air inlet device 3 is small, and there are only four adjustable ratios, that is, the pneumatic valves on the two gas paths 8 fully open, fully closed, and one open and one closed; thus in some cases, the air inlet device 3 cannot control the reaction of the process gas by changing the ratio of the volume flow rate of the process gas passing through its two gas paths. The density distribution of each area in the chamber 1 meets the needs of the process; on the other hand, if the adjustable range of the ratio of the volume flow rate of the process gas through the two gas paths of the gas inlet device 3 is larger, it is necessary to increase each The quantity of the second branch connected in parallel with the first restrictor gasket 7 in the air path not only increases the complexity of the structure of the intake device 3, thereby increasing its manufacturing cost, but also makes the volume of the intake device 3 corresponding Increased, requiring more space in plasma processing equipment

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