A kind of organic electroluminescence device and preparation method thereof
An electroluminescent device, organic technology, applied in the direction of organic light-emitting devices, organic light-emitting device parameters, electric solid-state devices, etc.
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Embodiment 1
[0250] In this example, yellow light-emitting devices with different doping concentrations of fluorescent dyes were prepared, and these devices have such as image 3 structure shown. The light-emitting layer contains a host material (Host 1) and a fluorescent doped dye (YD 1), in which the Host1 material is the first type of host material, and the first triplet state of its (n-π) excited state is slightly smaller than that of the CT excited state The first triplet state (0.1eV) of the state, the singlet energy level of YD1 is 2.2 eV, which is lower than the singlet energy level of Host 1. The structural formulas of Host 1 and YD 1 are as follows:
[0251] ,
[0252] 2-7, YD1
[0253] The device structure of this embodiment is as follows:
[0254] ITO (150nm) / NPB (40nm) / Host 1: (0.01%, 0.5%, 1.0%, 5%): YD 1 (30nm) / Alq 3 (20nm) / LiF(0.5nm) / Al(150nm)
[0255] Wherein, the percentages in parentheses before YD1 indicate different doping concentrations of fluorescent dyes, ...
Embodiment 2
[0274] In this example, red light-emitting devices with different doping concentrations of fluorescent dyes were prepared, and these devices had such image 3 structure shown. The light-emitting layer contains a host material (Host2) and a fluorescent dopant dye (RD 1). The energy level difference between the triplet state of the CT excited state of Host2 and the triplet state of the (n-π) excited state is very large (1.3 eV), and the second triplet state of the (n-π) excited state is higher than the first triplet state of the CT excited state. A singlet state, the singlet energy level of RD1 is 2.0 eV, and the singlet energy level of RD1 is lower than that of Host 2. The structural formulas of Host 2 and RD1 are as follows:
[0275] ,
[0276] 3-6, RD1
[0277] Prepare an organic electroluminescence device in the same manner as in Example 1 above, and the structure of the light-emitting device is as follows:
[0278] ITO (150nm) / NPB (40nm) / Host 2: (0.01%, 0.5%, 1.0%,...
Embodiment 3
[0289] In order to test the influence of the host material of the present invention on the performance of the organic electroluminescent device, this example prepared an organic electroluminescent device in the same manner as in Example 1 above. The structure of the light emitting device is as follows:
[0290] ITO (150nm) / NPB (40nm) / host material: 0.5% YD 1 (30nm) / Bphen (20nm) / LiF (0.5nm) / Al (150nm).
[0291] The properties of the organic electroluminescent device are shown in Table 3 below:
[0292] table 3
[0293]
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