Drive circuit based on I/O port of microprocessor
A microprocessor and driving circuit technology, applied in the direction of electrical digital data processing, instruments, etc., can solve the problem of not having a direct drive MOS tube, etc., and achieve the effect of small occupied space, stable driving circuit and low cost
Active Publication Date: 2015-06-24
SHENZHEN AEROSPACE NEW POWER TECH
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[0002] The power supply voltage of the microprocessor is usually 3.3V, generally not more than 5V, and its digital output I / O port is generally the same as the power supply voltage, while the saturated conduction voltage of the enhanced MOSFET is generally 12V. Its saturated conduction voltage drop is 5V, so the output from the I / O port of the microprocessor does not have the conditions to directly drive the MOS tube
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[0032] Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail:
[0033] see Figure 1 to Figure 4 , a driving circuit based on the microprocessor I / O port, including a microprocessor 1, an output port IN1 of the microprocessor 1, and an output port IN2 of the microprocessor 1, and the output port IN1 is connected to a diode through a capacitor C1 The cathode of D3, the anode of the diode D3 is connected to the gate of the MOSFET Q1; the cathode of the diode D1 is connected to the anode of the diode D2, and the cathode of the diode D3 is connected to the anode of the diode D1; the output port IN2 is connected to the diode through the capacitor C2 The cathode of D1, the cathode of the capacitor C3 is connected to the anode of the diode D3, the anode of the capacitor C3 is connected to the cathode of the diode D2; one end of the resistor R2 is connected to the gate of the MOSFET Q1, and the other end is connect...
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The invention discloses a drive circuit based on an I / O part of a microprocessor. The drive circuit based on the I / O port of the microprocessor comprises the microprocessor, an output port IN1 of the microprocessor and an output port IN2 of the microprocessor. The output port IN1 is connected with the negative electrode of a diode D3 through a capacitor C1. The positive electrode of the diode D3 is connected with the grid electrode of a MOSEFT Q1. The negative electrode of a diode D1 is connected with the positive electrode of a diode D2. The negative electrode of the diode D3 is connected with the positive electrode of the diode D1. The output port IN2 is connected with the negative electrode of the diode D1 through a capacitor C2. The negative electrode of a capacitor C3 is connected with the positive electrode of the diode D3. The positive electrode of the capacitor C3 is connected with the negative electrode of the diode D2. One end of a resistor R2 is connected with the grid electrode of the MOSEFT Q1, and the other end of the resistor R2 is connected with the positive electrode of the capacitor C3. The source electrode of the MOSFET Q1 is connected with the positive electrode of the capacitor C3. The drain electrode of the MOSFET Q1is connected with a power supply end through a resistor R1. The drive circuit is more stable, small in occupied space and low in cost.
Description
technical field [0001] The invention relates to a driving circuit, in particular to a driving circuit based on a microprocessor I / O port. Background technique [0002] The power supply voltage of the microprocessor is usually 3.3V, generally not more than 5V, and its digital output I / O port is generally the same as the power supply voltage, while the saturated conduction voltage of the enhanced MOSFET is generally 12V. Its saturated conduction voltage drop is 5V, so the output from the I / O port of the microprocessor does not have the conditions to directly drive the MOS tube. [0003] In order to achieve the purpose of driving the enhanced MOSFET, the usual methods are as follows: 1. Add logic gate circuits, such as NOT gates; 2. Use NPN or PNP transistors to increase the level of drive; 3. Use Darlington tubes to enhance drive signal. In order to drive the depletion-type MOSFET, it is also necessary to design a negative power conversion circuit for power supply. Content...
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IPC IPC(8): G06F13/20
Inventor 谷宇
Owner SHENZHEN AEROSPACE NEW POWER TECH