A kind of semiconductor device etching method

Abstract

The invention discloses a semiconductor device etching method. The semiconductor device etching method includes depositing an electricity-conducting layer, an isolation layer, an oxidation layer, a bottom anti-reflection coating and a photoresist layer on a semiconductor substrate sequentially, patterning the photoresist layer, etching the exposed anti-reflection coating and the exposed part of the oxidation layer, continuing to etch a semiconductor device by an oxygen-free etching gas to enable polymers to be deposited on the surfaces of all portions of the semiconductor device, washing away the polymers on the bottom surface of a groove or hole by oxygen, and continuing etching according to method needs. The semiconductor device etching method has the advantages that an oxidation layer is reserved at the bottom of the hole or groove after the hole or groove is etched in the oxidation layer and is bombed by the oxygen-free etching gas, the protective polymers are generated at the bottom of the hole or groove and on the surface of the semiconductor device after the oxidation layer and part of substances at the bottom of the hole are etched, the bottom of the hole or groove can be prevented from being cut through by the etching gas, the surface oxidation layer can be also prevented from corrosion, and the objectives of effectively protecting the surface of the semiconductor device and etching a substance layer at the bottom of the hole or groove are achieved.

Description

technical field [0001] The invention relates to an etching method, in particular to a semiconductor device etching method. Background technique [0002] At present, among semiconductor device etching methods, dry etching technology has good anisotropy, high selection ratio, good controllability, flexibility, and repeatability, safe operation of thin lines, easy automation, and no chemical waste. The processing process does not introduce pollution and has a high degree of cleanliness. It is gradually replacing the traditional wet etching technology. However, in dry etching, the thickness and uniformity of the photoresist will seriously affect the etching effect. [0003] In the prior art, when etching the contact hole of the wafer, due to the small parameters such as the width of the line, the distance, and the depth of the hole or groove to be etched, a thinner photoresist layer must be coated. After patterning However, because the photoresist layer is relatively thin, the ...

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Problems solved by technology

[0005] Therefore, in the overetching step of the semiconductor device manufacturing method, just because the coated photoresist layer is relatively thin, if the etching selectivity ratio setting for the material layer below the etched hole is relatively low, the controllability is relatively low. When it is poor, the thinner photoresist layer and the oxygen-containing etching gas constantly bombarding the surface of the semiconductor device will often cause the material layer below the hole to be etched through, causing the loss of the functional layer, resulting in a short circuit or open circuit in the subsequent semiconductor device, or even Make semiconductor devices completely obsolete

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