Covering type super-junction transverse double diffusion metal oxide semiconductor field effect transistor with N-type buried layer
An oxide semiconductor, lateral double diffusion technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as breaking the charge balance, reducing the lateral breakdown voltage of SJ-LDMOS devices, and the inability of the P-type column region to be completely depleted. , to achieve high breakdown voltage, low specific on-resistance, and improve the effect of contradictory relationship
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[0025] see figure 1 and figure 2 In the following, an N-type buried-layer-covered (N-channel) superjunction lateral double-diffused metal-oxide-semiconductor field effect transistor is taken as an example to specifically introduce the new structure in the embodiment of the present invention. Those skilled in the art should be able to recognize that this embodiment does not limit the protection scope of the present invention.
[0026] The N-type buried layer covered semi-superjunction lateral double-diffused metal oxide semiconductor field effect transistor includes:
[0027] P-type semiconductor substrate 1;
[0028] The P-type base region 2 and the super junction region adjacent to the surface of the N-type epitaxial layer on the P-type semiconductor substrate 1; the super junction region adopts the N-type column region 4 and the P-type column region 5 to be arranged at intervals in a lateral period ( A period is simplified in the figure), the width of each N-type column ...
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