High-k dielectric trench lateral superjunction double-diffused metal oxide element semiconductor field effect transistor and manufacturing method thereof
A field effect transistor and semiconductor technology, which is applied in the field of lateral superjunction double diffusion metal oxide semiconductor field effect transistor and its fabrication
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[0048] Such as figure 1 As shown, the lateral superjunction double-diffused metal oxide element semiconductor field effect transistor of the high-K dielectric trench proposed by the present invention includes:
[0049] A substrate 11 of elemental semiconductor material (such as silicon or germanium) (with a doping concentration of 1×10 13 cm -3 ~1×10 15 cm -3 );
[0050] an epitaxial layer 10 grown on a substrate;
[0051] The base region 12 and the buffer layer 9 formed on the epitaxial layer; the product of the doping concentration of the buffer layer and the thickness of the buffer layer satisfies the principle of charge balance to eliminate the substrate-assisted depletion effect; the doping concentration of the buffer layer is 1×10 14 cm -3 ~1×10 16 cm -3 ;
[0052] The super junction drift region 4 formed on the buffer layer is composed of several N columns 41 and P columns 42 arranged alternately; the doping concentration of the super junction drift region is 1...
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