Lateral transistor with junction gate AlGaN/GaN heterojunction and manufacturing method thereof

Abstract

The invention provides a lateral transistor with a junction gate AlGaN / GaN heterojunction and a manufacturing method thereof. In the lateral transistor, an epitaxial layer forms a P-type region through ion implantation corresponding to a region below a gate electrode; the surface of the epitaxial layer close to one side of a drain electrode also forms an AlGaN layer through heteroepitaxy, the AlGaN layer is connected with a drain electrode, and an AlGaN / GaN heterojunction is formed; the gate electrode is a junction type gate, and the source electrode and the drain electrode are in ohmic contact. High-density two-dimensional electron gas is formed at the heterojunction interface by the AlGaN / GaN heterojunction through spontaneous polarization and piezoelectric polarization effects, so thatthe lateral transistor with the junction type gate and the AlGaN / GaN heterojunction has very low on-resistance. The longitudinal electric field distribution of the transistor is optimized by the heterojunction between a gallium nitride epitaxial layer and a substrate, thereby improving the breakdown voltage of the device; and meanwhile, an enhanced device can be obtained by adopting the junction type gate.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a junction gate lateral transistor. Background technique [0002] The superior properties of wide bandgap semiconductor materials, high electron drift saturation velocity, small dielectric constant, and good electrical conductivity have great potential for applications in the field of power devices. Since the nitride material has no natural substrate, it needs to rely on the material growth method to realize the single crystal material. During the growth process of the GaN material, due to the unavoidable existence of N vacancies, Si impurities and O impurities, even if the GaN material is not doped , the n-type doping concentration of GaN material will also be highly 10 16 / cm -3 , this phenomenon has a serious impact on the performance of GaN-based electronic devices. [0003] JFET is a voltage-controlled unipolar device. It has the advantages of fast switching spe...

AI Technical Summary

Problems solved by technology

[0004] Currently, in junction-gate lateral transistors, as the length of the drift region increases, the on-resistance increases substantially, and the current density is still small

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