Lateral transistor with junction gate AlGaN/GaN heterojunction and manufacturing method thereof
A technology of lateral transistors and heterojunctions, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of low current density, etc., and achieve the goals of increasing breakdown voltage, reducing conduction loss, and low conduction loss Effect
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[0035] The present invention will be described below by taking an N-channel junction gate and an AlGaN / GaN heterojunction lateral transistor as an example in conjunction with the accompanying drawings.
[0036] Such as figure 1 As shown, the structure of this embodiment includes:
[0037] A substrate of gallium nitride material;
[0038] Epitaxial layer of gallium nitride material;
[0039] a source on the surface of the epitaxial layer;
[0040] A gate located on the surface of the epitaxial layer;
[0041] The drain on the surface of the epitaxial layer;
[0042] The gate is a junction gate, and the epitaxial layer corresponds to the region below the gate to form a P-type region by ion implantation; the drift region is composed of N-type GaN and AlGaN / GaN heterojunction; the lateral direction of the AlGaN / GaN heterojunction The typical ratio of the size to the entire device length is 1 / 2 to 3 / 4; the AlGaN / GaN heterojunction is directly connected to the P-type region or ...
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