Lateral transistor with junction gate algan/gan heterojunction and fabrication method thereof
A technology of lateral transistors and heterojunctions, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as low current density, and achieve the effects of improved breakdown voltage, good noise performance, and high withstand voltage
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[0035] The present invention will be described below by taking an N-channel junction gate and an AlGaN / GaN heterojunction lateral transistor as an example in conjunction with the accompanying drawings.
[0036] Such as figure 1 As shown, the structure of this embodiment includes:
[0037] A substrate of gallium nitride material;
[0038] Epitaxial layer of gallium nitride material;
[0039] a source on the surface of the epitaxial layer;
[0040] A gate located on the surface of the epitaxial layer;
[0041] The drain on the surface of the epitaxial layer;
[0042] The gate is a junction gate, and the epitaxial layer corresponds to the region below the gate to form a P-type region by ion implantation; the drift region is composed of N-type GaN and AlGaN / GaN heterojunction; the lateral direction of the AlGaN / GaN heterojunction The typical ratio of the size to the entire device length is 1 / 2 to 3 / 4; the AlGaN / GaN heterojunction is directly connected to the P-type region or ...
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