Lateral transistor with junction gate algan/gan heterojunction and fabrication method thereof

Abstract

The invention provides a lateral transistor with a junction gate AlGaN / GaN heterojunction and a manufacturing method thereof. In this lateral transistor, the epitaxial layer corresponds to the region below the gate to form a P-type region by ion implantation; the surface of the epitaxial layer near the drain is also formed by heteroepitaxial AlGaN layer and connected to the drain to form an AlGaN / GaN heterogeneous Mass junction; the gate is a junction gate, and the source and drain are ohmic contacts. The AlGaN / GaN heterojunction forms a high-density two-dimensional electron gas at the heterojunction interface through the spontaneous polarization and piezoelectric polarization effects, so that the lateral transistor with a junction gate and an AlGaN / GaN heterojunction has a very low on-resistance. The heterojunction between the gallium nitride epitaxial layer and the substrate optimizes the longitudinal electric field distribution of the transistor and improves the breakdown voltage of the device; at the same time, an enhanced device can be obtained by using a junction gate.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a junction gate lateral transistor. Background technique [0002] The superior properties of wide bandgap semiconductor materials, high electron drift saturation velocity, small dielectric constant, and good electrical conductivity have great potential for applications in the field of power devices. Since the nitride material has no natural substrate, it needs to rely on the material growth method to realize the single crystal material. During the growth process of the GaN material, due to the unavoidable existence of N vacancies, Si impurities and O impurities, even if the GaN material is not doped , the n-type doping concentration of GaN material will also be highly 10 16 / cm -3 , this phenomenon has a serious impact on the performance of GaN-based electronic devices. [0003] JFET is a voltage-controlled unipolar device. It has the advantages of fast switching spe...

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Problems solved by technology

[0004] Currently, in junction-gate lateral transistors, as the length of the drift region increases, the on-resistance increases substantially, and the current density is still small

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