Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-k dielectric trench lateral superjunction double-diffused metal oxide wide bandgap semiconductor field effect transistor and manufacturing method thereof

A field effect transistor and semiconductor technology, applied in the field of lateral superjunction double diffusion metal oxide semiconductor field effect transistors

Active Publication Date: 2020-08-21
XIDIAN UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are few techniques for optimizing the vertical electric field of SJ-LDMOS devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-k dielectric trench lateral superjunction double-diffused metal oxide wide bandgap semiconductor field effect transistor and manufacturing method thereof
  • High-k dielectric trench lateral superjunction double-diffused metal oxide wide bandgap semiconductor field effect transistor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] Such as figure 1 , figure 2 As shown, the lateral superjunction double-diffused metal oxide wide bandgap semiconductor field effect transistor of the high-K dielectric trench proposed by the present invention includes:

[0050] A substrate 11 of a wide bandgap semiconductor material (such as gallium nitride, silicon carbide or diamond) (the doping concentration of the substrate is 1×10 13 cm -3 ~1×10 15 cm -3 );

[0051] an epitaxial layer 10 grown on a substrate;

[0052] The base region 12 and the buffer layer 9 formed on the epitaxial layer; the product of the doping concentration of the buffer layer and the thickness of the buffer layer satisfies the principle of charge balance to eliminate the substrate-assisted depletion effect; the doping concentration of the buffer layer is 1×10 14 cm -3 ~1×10 16 cm -3 ;

[0053]The super junction drift region 4 formed on the buffer layer is composed of several N columns 41 and P columns 42 arranged alternately; the d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
relative permittivityaaaaaaaaaa
Login to View More

Abstract

The invention proposes a high-K dielectric pillar (HK) groove lateral superjunction double-diffused metal oxide wideband gap semiconductor field-effect transistor (SJ-LDMOS) and a fabrication method thereof. In the device, an HK layer with a deep groove is mainly formed in a drain end region of an SJ-LDMOS device, a lower end of the HK layer with the deep groove is deepen into an epitaxial layer on a device substrate, and an upper end of the HK layer is connected with a drain electrode on a surface of the device. When the device is switched off, the HK layer has a uniform electric field, so that electric field distribution in a body of the device can be modulated, the longitudinal peak electric field of a device drain end is reduced, and the longitudinal electric field distribution of thedevice is optimized; and meanwhile, the HK layer and a wideband gap semiconductor material substrate form an MIS capacitance structure, charges in the substrate can be effectively helped to be consumed when the device is switched off, so that the conflict relation between a breakdown voltage and specific conduction resistance of the device is further optimized.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a lateral superjunction double-diffused metal oxide semiconductor field effect transistor. Background technique [0002] Wide bandgap semiconductor materials have the characteristics of large band gap, high critical breakdown electric field, high thermal conductivity and high electron saturation drift velocity, so they have very broad application prospects in the field of high-power, high-temperature and high-frequency power electronics. At present, in field effect transistors with wide bandgap semiconductors (typically SiC) as substrates, lateral power devices represented by lateral double-diffused MOS (Lateral Double-diffused MOS, LDMOS for short) are widely used in high voltage integrated circuits (High Voltage Integrated Circuit, HVIC for short) and Smart Power Integrated Circuit (SPIC for short). In order to further optimize the breakdown voltage (Breakdown Voltag...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/78H01L21/336
CPCH01L29/0642H01L29/66227H01L29/78
Inventor 段宝兴曹震师通通杨鑫杨银堂
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com