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A method of making nisige material using ti insertion layer

A technology of insertion layer and metal layer, which is applied in the field of making NiSiGe materials by using Ti insertion layer, which can solve the problems that it is not easy to form continuous, uniform, stable and other problems

Active Publication Date: 2020-01-07
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a kind of method utilizing Ti intercalation layer to make NiSiGe material, be used for solving not easy to form continuous, uniform, stable Ni(SiGe) in the prior art 1-x Ge x ) material problem

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  • A method of making nisige material using ti insertion layer
  • A method of making nisige material using ti insertion layer
  • A method of making nisige material using ti insertion layer

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Embodiment Construction

[0030] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0031] see Figure 1 to Figure 5 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides a method for manufacturing a NiSiGe material through a Ti inserting layer. The method comprises at the steps of 1) providing a Si1-xGex layer, and forming a Ti metal film on the Si1-xGex layer, wherein x ranges from 0.05 to 0.9; 2) forming a Ni metal layer on the surface of a Ti doping layer; 3) enabling the Ni metal to pass through the Ti metal film to react with the Si1-xGex layer to generate a NiSi1-xGex layer by the quick annealing process, wherein x ranges from 0.05 to 0.9. The method has the beneficial effects that the heat activating energy for the reaction of Ni and the Si1-xGex layer can be provided according to the special temperature; extremely less Ti is reacted with the Si1-xGex and is kept in the boundary of the Si1-xGex layer and the NiSi1-xGex layer, and defect gathering areas of some atomic layers can be generated to stop the transmission of the film stress from the surface layer to the bottom layer; meanwhile, the Ni and the Si1-xGex can slowly react; the straining of Si1-xGex can be certainly maintained, and the continuous, uniform and stable NiSiGe material can be obtained.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for making NiSiGe material by using a Ti insertion layer. Background technique [0002] In the source and drain regions of traditional transistors, the electrodes generally use direct contact between semiconductor and metal electrodes. The contact resistance is very large, and the Schottky barrier formed is very high, which affects the performance of the device. Therefore, people are constantly looking for a method that can reduce the contact resistance of electrodes. Among them, a structure with good effect basically completely replaces the technology of direct contact between semiconductor and metal electrodes. This structure with good effect is the use of metal and Si materials. The reaction produces metal silicide as a contact material, which can greatly reduce the contact resistance and Schottky barrier, and has been widely used. Later, the metal...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28
CPCH01L21/28H01L21/283H01L29/41733H01L29/456
Inventor 张波侯春雷狄增峰张苗赵清太
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI