Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes a substrate extending in a first direction to define a substrate length and a second direction perpendicular to the first direction to define a substrate width. A first semiconductor fin is formed on an upper surface of the substrate. The first semiconductor fin extends along the second direction at a first distance to define a first fin width. A first gate channel is formed between a first source/drain junction formed in the substrate and a second source/drain junction formed in the first semiconductor fin. A first gate stack is formed on sidewalls of the first gate channel. A first spacer is interposed between the first gate stack and the first source/drain junction.

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly, to FinFET semiconductor devices. Background technique [0002] Conventional multi-gate FinFET semiconductor devices include one or more semiconductor fins (fin) that run along the length (l eff ) extend to define the fin length. Fin width (w fin ) extends perpendicular to the fin length. With gate length (l GATE ) gate channel is defined between the source (S) region and the drain (D) region. Source region (S), gate channel (l GATE ) and the drain region (D) are typically formed in the same plane as each other. The current flows parallel to the l between the source (S) and drain (D) regions eff flow. To achieve higher drive currents, conventional FinFET devices may include multiple fins along the width of the FinFET device (w eff ) are formed parallel to each other, as shown in Figure 1. Therefore, as the need to drive higher currents increases, it becomes necessar...

AI Technical Summary

Problems solved by technology

The formation of additional fins also increases the total w eff

Thus, width quantization is an inherent limiting factor for conventional multi-gate FinFET devices

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