Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Etching solution, replenishing solution, and method for forming copper wiring

A technology for etching solution and copper wiring, which is applied in chemical/electrolytic methods to remove conductive materials, electrical components, and printed circuit manufacturing.

Inactive Publication Date: 2017-09-19
MEC CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, the following phenomenon occurs: the part (that is, the copper wiring part) that is covered by the etching resist and is not expected to be removed by etching is removed by the etching solution, and the width of the copper wiring changes from the bottom to the top. thin

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching solution, replenishing solution, and method for forming copper wiring
  • Etching solution, replenishing solution, and method for forming copper wiring
  • Etching solution, replenishing solution, and method for forming copper wiring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0056] Examples of the present invention will be described together with comparative examples below. In addition, this invention is not limited to the following Example and interpreted.

[0057] Each etchant of the composition shown in Table 1, 2 was prepared, it etched under the conditions mentioned later, and each item was evaluated according to the evaluation method mentioned later. In addition, in each etching liquid of the composition shown in Table 1, 2, the remainder was ion-exchange water. In addition, the concentration of hydrochloric acid shown in Tables 1 and 2 is the concentration of hydrogen chloride.

[0058] (Test substrate used)

[0059] Prepare a copper-clad laminate laminated with an electrolytic copper foil (manufactured by JX Nippon Mining Metal Co., Ltd., standard copper foil, trade name: JTC foil) with a thickness of 12 μm, and use a treatment solution containing a palladium catalyst (manufactured by Okuno Pharmaceutical Co., Ltd.) , brand name: ADDCOP...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
concentrationaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Provided are an etching fluid that is capable of suppressing side etching while not impairing the linearity of copper wiring, a replenishing fluid for the same, and a method for forming copper wiring. This etching fluid is a copper etching fluid characterized in being an aqueous solution containing acid, oxidizing metal ions, and a compound (A), the compound (A) having in molecules thereof an amino group and at least one sulfur-containing functional group selected from the group consisting of thiole groups, sulfide groups, and disulfide groups (where the sulfide and disulfide groups are groups in which the sulfur atoms and the heteroatoms linked thereto are linked by a single bond, and which do not form &pgr; conjugates).

Description

technical field [0001] The present invention relates to a copper etching solution, its supply solution, and a method for forming copper wiring. Background technique [0002] In the manufacture of a printed wiring board, when forming a copper wiring pattern by photolithography, ferric chloride-based etchant, copper chloride-based etchant, alkaline etchant, etc. are used as etchant. When these etching solutions are used, copper under the etching resist may dissolve from the side surface of the wiring pattern, which may be called "side etching". That is, the following phenomenon occurs: the part (that is, the copper wiring part) that is covered by the etching resist and is not expected to be removed by etching is removed by the etching solution, and the width of the copper wiring changes from the bottom to the top. thin. Especially in the case of a fine copper wiring pattern, it is necessary to reduce such side etching as little as possible. In order to suppress this undercu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18H05K3/06
CPCC23F1/02C23F1/18H05K3/067H05K2203/0789
Inventor 小寺浩史
Owner MEC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com