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Composition for forming resin thin film for hydrofluoric acid etching and resin thin film for hydrofluoric acid etching

A resin film, hydrofluoric acid technology, applied in surface etching compositions, chemical instruments and methods, photosensitive materials for opto-mechanical equipment, etc. The effect of excellent, excellent hydrofluoric acid barrier properties

Inactive Publication Date: 2017-05-10
NISSAN CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no verification of an acrylic binder having resistance to hydrofluoric acid, and there is no report confirming the use of an acrylic binder in a resin composition for hydrofluoric acid etching.

Method used

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  • Composition for forming resin thin film for hydrofluoric acid etching and resin thin film for hydrofluoric acid etching
  • Composition for forming resin thin film for hydrofluoric acid etching and resin thin film for hydrofluoric acid etching
  • Composition for forming resin thin film for hydrofluoric acid etching and resin thin film for hydrofluoric acid etching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～12

[0194] As a hydrogenated polybutadiene compound (HPBD) having a (meth)acryloyl group, TEAI-1000 (weight average molecular weight: 5500) manufactured by Nippon Soda Co., Ltd. was used, and the components were mixed in the mass ratio described in Table 1, Thus a composition is prepared.

[0195] [Table 1]

[0196]

Embodiment 5

[0198] In Example 5, except that UV-2750B (urethane acrylate resin manufactured by Nippon Synthetic Chemical Industry Co., Ltd.) was used instead of TEAI-1000, the components were mixed at the same mass ratio to prepare a composition .

[0199] (2) Preparation of cured film and evaluation of hydrofluoric acid resistance

Embodiment 13～24、 comparative example 2

[0201] The compositions prepared in Examples 1 to 12 and Comparative Example 1 were coated on surfaces with a thermally oxidized film (SiO 2 On a silicon substrate (film thickness: 300 nm), the coating film was baked on a hot plate at 110° C. for 2 minutes, and cooled at room temperature for 2 minutes to form a resin film on the substrate.

[0202] Next, each resin film was subjected to UV exposure (55mW / cm 2 , 999mJ) was baked and cured at 150° C. for 5 minutes using a hot plate to form a cured film. In addition, the film thickness is 30 micrometers - 50 micrometers.

[0203] Next, each substrate with a cured film was immersed in a mixed acid aqueous solution (hereinafter also referred to as etching solution) containing 9% by mass of hydrofluoric acid and 8% by mass of sulfuric acid at 25° C., and was carried out for 60 minutes while circulating the etching solution. minute etching process. Thereafter, the substrate was washed with water, and then the cured film was peeled...

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Abstract

Provided is a composition for forming a resin thin film for hydrofluoric acid etching comprising a hydrogenated polybutadiene compound having (meth)acrylic groups and a radical polymerization initiator.

Description

technical field [0001] The present invention relates to a composition for forming a resin film for hydrofluoric acid etching and a resin film for hydrofluoric acid etching. Background technique [0002] Wet etching is widely used as a substrate processing method, and it is also used in various processes in the processing of large substrates for flat panel displays. [0003] For example, in the back cover of an organic electroluminescent display (organic ELD), the use of glass for the back cover has been studied in order to reduce the thickness of the panel. The glass back cover is formed by etching a glass substrate. In etching, a resist film is formed on the glass substrate, and only the desired area is etched. [0004] Conventionally, various resist resin compositions have been used as mask materials for wet etching. The resist resin composition is coated on a glass substrate, has SiO 2 or a substrate of an insulating film such as SiN and patterned, and then etched by i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F299/06C03C15/00C08F290/06C09D109/00C09K13/08G03F7/027
CPCC08F290/048C08L9/00C09D109/00C09D133/08C09D133/10C09D151/00C03C15/00C09K13/08G03F7/027C08F220/10C08F222/10G03F7/11G03F7/26C09D151/003G03F7/038G03F7/039G03F7/16G03F7/168G03F7/20G03F7/32G03F7/40
Inventor 佐藤哲夫
Owner NISSAN CHEM CORP
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